2SC24040DL

Overview

The Panasonic 2SC2404 is a silicon NPN epitaxial planar transistor designed for high-frequency amplification. It operates within a collector-emitter voltage of 20 V and supports a maximum collector current of 15 mA, with a power dissipation rating of 150 mW at 25°C. The device features a transition frequency (fT) ranging from 450 to 650 MHz at 100 MHz test conditions. Packaged in the Mini3-G1 (EIAJ SC-59) format, it offers a noise figure as low as 3.3 dB and a power gain of 24 dB at 100 MHz.

Feature Summary

• Optimized for RF amplification in FM/AM radio circuits
• High transition frequency suitable for signal processing
• Miniature package design enabling equipment downsizing
• Supports automatic insertion via tape or magazine packing

Applications

• RF amplification stages in FM/AM radios
• General-purpose high-frequency amplification circuits
• Communications equipment signal processing

Procurement Notes

Verify component authenticity through authorized distributors or official Panasonic channels. Confirm RoHS compliance status and check the manufacturer's website for the latest lifecycle stage details, as this component may be subject to maintenance or discontinuation protocols.

Selection Notes

Select this component when designing circuits requiring high-frequency performance with low noise characteristics. Ensure the operating environment remains within the specified junction temperature range and that the package dimensions align with the Mini3-G1 footprint requirements.

Part Context

This component belongs to the Panasonic 2SC2404 series of silicon NPN transistors. It is specifically engineered for applications demanding high transition frequencies and compact physical footprints, serving as a standard solution for general electronic equipment and communications hardware.

Replacement Considerations

Consult official Panasonic documentation for verified substitute part numbers before implementation. Cross-referencing electrical parameters such as fT, VCEO, and package type is essential to ensure functional compatibility.

FAQ

What is the maximum collector-base voltage rating?

The absolute maximum rating for collector-base voltage (V_CBO) with the emitter open is 30 V.

How does the transition frequency vary with emitter current?

The transition frequency (fT) typically ranges from 450 to 650 MHz under standard test conditions (V_CB = 6 V, I_E = -1 mA, f = 100 MHz).

What package type is used for this transistor?

The device utilizes the Mini3-G1 package, which corresponds to the EIAJ SC-59 standard.