2SC24060SL

Single Bipolar Transistors Overview

The Panasonic 2SC2406 is a silicon NPN epitaxial planar transistor designed for low-frequency and low-noise amplification. It features a Mini3-G1 surface-mount package with dimensions of 2.9 mm x 1.5 mm x 0.95 mm. Key electrical parameters include a collector-emitter voltage (VCEO) of 55 V, a collector current (IC) rating of 50 mA, and a collector power dissipation (PC) of 200 mW at 25°C. The device offers a transition frequency (fT) of 200 MHz and a noise voltage (NV) of 110 mV under standard test conditions.

Single Bipolar Transistors Feature Summary

• Low noise voltage characteristics suitable for sensitive signal processing
• High forward current transfer ratio (hFE) for efficient amplification
• Miniature package design enabling equipment downsizing and automated tape insertion

Single Bipolar Transistors Applications

• Low-frequency amplification circuits
• Low-noise amplifier stages in general electronic equipment
• Audio signal processing applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm packaging type, as the datasheet indicates tape packing availability. Confirm compliance with RoHS Directive EU 2002/95/EC requirements. Check the manufacturer's official website for the latest lifecycle status regarding maintenance or discontinuation before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component when low noise performance is critical for low-frequency applications. Ensure the operating collector current remains within the 50 mA limit and that the 200 mW power dissipation rating is not exceeded at the intended ambient temperature. Verify that the Mini3-G1 package footprint aligns with the target PCB layout constraints.

Single Bipolar Transistors Part Context

This component belongs to the Panasonic 2SC series of small-signal transistors. It serves as the complementary NPN counterpart to the 2SA1035 PNP transistor. The device utilizes an epitaxial planar construction method typical of modern silicon switching and amplifying devices.

Single Bipolar Transistors Replacement Considerations

The 2SA1035 is documented as the complementary part. No direct substitute part numbers are listed in the provided documentation.