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The 2SC2620QCTR-E is an NPN silicon RF small signal transistor manufactured by Renesas Electronics Corporation. Designed for VHF band applications, this component features a maximum collector current of 0.02 A and a collector-emitter voltage rating of 20 V. It exhibits a nominal transition frequency (fT) of 940 MHz and a maximum collector capacitance of 1.2 pF. The device is housed in a small outline package with three gull-wing terminals, suitable for surface mount assembly. Its primary function is amplifier usage within radio frequency circuits.
Verify the specific suffix QCTR-E against official Renesas documentation to confirm tape and reel packaging specifications. Ensure the part number matches the exact electrical parameters required for the design. Cross-reference the manufacturer's latest datasheet to confirm current production status and compliance certifications before finalizing procurement orders.
Select this component when designing VHF band circuits requiring an NPN silicon transistor with a transition frequency near 940 MHz. The low collector capacitance makes it suitable for high-frequency signal paths where minimal loading is critical. Verify that the 20 V collector-emitter voltage rating aligns with the circuit's operating conditions.
This transistor belongs to the 2SC2620 series from Renesas Electronics, which includes variants such as the 2SC2620QB and 2SC2620QB01. These devices are categorized as RF small signal transistors intended for amplifier applications. The series utilizes silicon technology and is packaged in small outline formats compatible with automated surface mount assembly processes.
Publicly confirmed substitute part numbers for the 2SC2620QCTR-E are not available in the provided reference data. Engineers should consult official Renesas documentation or authorized distributor databases to identify verified equivalent components that match the specific electrical and mechanical requirements.