2SC2655-O,F(J

Description：TRANS NPN 50V 2A TO-92MOD
Series：-

SKU:8b3ede707e0b Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SC2655-O,F(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 50V 2A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2655-O,F(J

Description：TRANS NPN 50V 2A TO-92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：2:00 AM
Voltage - Collector Emitter Breakdown (Max)：50 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 1A
Current - Collector Cutoff (Max)：1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 500mA, 2V
Power - Max：900 mW
Frequency - Transition：100MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body
Supplier Device Package：TO-92MOD
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC2655-O,F(J

2SC2655-O,F(J

Single Bipolar Transistors Overview

The 2SC2655-O,F(J) is a silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage using the PCT process. It is housed in a JEDEC TO-92MOD package with three pins. The device supports a maximum collector current of 2 A and a collector-emitter voltage of 50 V, with a power dissipation rating of 900 mW at 25°C ambient temperature. Key electrical characteristics include a low saturation voltage of 0.5 V (max) at 1 A collector current and a transition frequency of 100 MHz. The 'O' suffix indicates a DC current gain (hFE) classification range of 70 to 140.

Single Bipolar Transistors Feature Summary

Low saturation voltage for efficient switching performance
High-speed switching capability with short storage time
Complementary pairing available with the 2SA1020 PNP transistor

Single Bipolar Transistors Applications

Power amplifier circuits
Power switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to confirm environmental compliance status, such as RoHS compatibility, as indicated by lot number markings. Confirm that the hFE binning matches the required circuit design specifications before procurement.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high collector current handling up to 2 A and robust power dissipation capabilities. Ensure the application operates within the specified junction temperature limits and utilizes appropriate heat sinking if operating near maximum power ratings.

Single Bipolar Transistors Part Context

This part belongs to the family of general-purpose NPN transistors designed for audio and radio frequency power amplification. It is specifically engineered to pair with complementary PNP devices for push-pull configurations.

Single Bipolar Transistors Replacement Considerations

The 2SA1020 serves as the official complementary PNP counterpart. Verify pinout compatibility and thermal characteristics when substituting or pairing components.