2SC2655-Y(6MBH1,AF

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SC2655 is an NPN silicon epitaxial transistor utilizing the PCT process, housed in a JEDEC TO-92MOD package. It supports a collector current of 2 A with a maximum collector power dissipation of 900 mW. The device features a collector-emitter breakdown voltage of 50 V and a low saturation voltage of 0.5 V at 1 A. Transition frequency reaches 100 MHz, while storage time is typically 1.0 μs. DC current gain ranges from 40 to 240 depending on operating conditions.

Single Bipolar Transistors Feature Summary

• Low saturation voltage for efficient switching
• High-speed switching capability
• Complementary pairing with 2SA1020

Single Bipolar Transistors Applications

• Power amplifier applications
• Power switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives, as markings indicate potential variations between standard and compliant versions. Confirm the specific hFE classification suffix (Y) matches design requirements for current gain ranges. Review the Toshiba Semiconductor Reliability Handbook for derating concepts before finalizing designs under heavy loads or extreme temperatures.

Single Bipolar Transistors Selection Notes

Select this component for circuits requiring high collector current handling up to 2 A within a compact through-hole package. Ensure base drive currents are sufficient to maintain saturation below 0.5 V. Consider thermal management strategies given the 900 mW dissipation limit. Verify that the 50 V voltage rating accommodates peak transient voltages in the target application environment.

Single Bipolar Transistors Part Context

This NPN transistor belongs to Toshiba's general-purpose discrete semiconductor lineup designed for robust performance in consumer and industrial electronics. It serves as the complementary counterpart to the 2SA1020 PNP transistor, facilitating push-pull amplifier configurations. The device utilizes a plastic encapsulated mold for durability in standard assembly processes.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA1020 as the complementary part. No other direct substitute part numbers are documented in the provided source material.