2SC2655-Y,F(J

Single Bipolar Transistors Overview

The Toshiba 2SC2655 is a silicon NPN epitaxial planar transistor manufactured using the PCT process. It features a maximum collector current of 2 A and a collector-emitter voltage rating of 50 V, with a high collector power dissipation of 900 mW. The device exhibits low saturation voltage (VCE(sat) = 0.5 V max at IC = 1 A) and high-speed switching characteristics, including a typical storage time of 1.0 μs. It has a transition frequency of 100 MHz and is designed for TO-92MOD packages.

Single Bipolar Transistors Feature Summary

• Low saturation voltage for efficient power handling
• High-speed switching capability with short storage times
• Complementary pairing with the 2SA1020 PNP transistor

Single Bipolar Transistors Applications

• Power amplifier circuits
• General-purpose power switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with Toshiba sales representatives, as markings indicate specific environmental compliance variations. Confirm package type JEDEC TO-92MOD matches design requirements. Review the Toshiba Semiconductor Reliability Handbook for derating concepts under heavy loads to ensure long-term operational reliability in target environments.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring moderate current handling up to 2 A with low on-state losses. Ensure base drive currents are sufficient to maintain saturation below 0.5 V. Consider thermal management strategies given the 900 mW dissipation limit. Verify that the 50 V breakdown voltage aligns with peak circuit voltages to prevent overstress during transient conditions.

Single Bipolar Transistors Part Context

This NPN transistor belongs to Toshiba's general-purpose discrete semiconductor lineup. It utilizes an epitaxial planar structure optimized for robust performance in audio and switching stages. The device serves as a standard replacement in legacy consumer electronics and industrial control boards where reliable amplification or switching is required within its specified electrical limits.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA1020 as the complementary PNP counterpart. Direct pin-compatible replacements from other manufacturers require verification of hFE ranges and saturation voltages against these specific Toshiba parameters.