2SC2655-Y(HIT,F,M)

Single Bipolar Transistors Overview

The Toshiba 2SC2655-Y(HIT,F,M) is an NPN silicon epitaxial transistor utilizing the PCT process, housed in a JEDEC TO-92MOD package. It features a maximum collector current of 2 A and a collector-emitter breakdown voltage of 50 V. The device provides a high collector power dissipation rating of 900 mW at 25°C ambient temperature. Electrical characteristics include a low saturation voltage of 0.5 V max at 1 A collector current and a transition frequency of 100 MHz typical. Storage time is typically 1.0 μs.

Single Bipolar Transistors Feature Summary

• Low saturation voltage for efficient switching performance
• High-speed switching capability with short storage times
• Complementary pairing available with the 2SA1020 PNP transistor

Single Bipolar Transistors Applications

• Power amplifier circuits
• General-purpose power switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compliance status by checking the lot number marking on the component body or contacting the manufacturer directly, as indicated in the datasheet documentation. Confirm that the specific ordering suffix matches the required hFE classification band (Y: 120 to 240). Ensure the procurement channel sources genuine Toshiba Semiconductor and Storage products to guarantee adherence to absolute maximum ratings and reliability standards.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high collector current handling up to 2 A within a standard through-hole TO-92MOD footprint. The Y suffix indicates a specific DC current gain range of 120 to 240, suitable for applications demanding consistent amplification factors. Consider the complementary 2SA1020 if a matched PNP counterpart is needed for push-pull configurations.

Single Bipolar Transistors Part Context

This device belongs to the Toshiba 2SC2655 series of NPN transistors manufactured using the PCT (Planar Chip Transistor) process technology. The series is engineered for robust performance in consumer electronics and industrial equipment, offering a balance of high power dissipation and fast switching speeds within a compact plastic encapsulated form factor.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA1020 as the complementary PNP transistor for this series. Verify pinout compatibility and electrical parameter alignment before substituting with other generic NPN transistors in the TO-92MOD package.

Single Bipolar Transistors FAQ

What is the hFE classification range for the 'Y' suffix?

The 'Y' suffix designates a minimum DC current gain (hFE) range of 120 to 240 at IC = 0.5 A and VCE = 2 V.

What is the maximum junction temperature rating?

The maximum junction temperature (Tj) rating is 150 °C.

Is this transistor intended for aerospace or medical use?

No, the product is not intended for unintended uses such as aerospace, medical equipment, or nuclear facilities unless specifically permitted by Toshiba.