Single Bipolar Transistors 2SC2655-Y,T6F(J product image

2SC2655-Y,T6F(J

  • Description:TRANS NPN 50V 2A TO-92MOD
  • Series:-

SKU:121c54124a65 Category: Brand:

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2SC2655-Y,T6F(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 50V 2A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2655-Y,T6F(J

  • Description:TRANS NPN 50V 2A TO-92MOD
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 500mA, 2V
  • Power - Max:900 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92MOD
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC2655-Y,T6F(J

2SC2655-Y,T6F(J

Single Bipolar Transistors Overview

The Toshiba 2SC2655-Y,T6F(J) is a silicon NPN epitaxial planar transistor manufactured using the PCT process. It features a JEDEC TO-92MOD package with three pins. Key electrical parameters include a collector-emitter breakdown voltage of 50 V, a maximum collector current of 2 A, and a collector power dissipation of 900 mW. The device exhibits a low saturation voltage of 0.5 V (max) at 1 A and a transition frequency of 100 MHz. The 'Y' suffix indicates a DC current gain range of 120 to 240.

Single Bipolar Transistors Feature Summary

  • Utilizes PCT process for high-speed switching performance
  • Provides low collector-emitter saturation voltage
  • Offers high collector power dissipation capability
  • Complements the 2SA1020 PNP transistor

Single Bipolar Transistors Applications

  • Power amplifier circuits
  • Power switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation to confirm environmental compliance status, such as RoHS compatibility or lead-free composition. Confirm that the package marking aligns with the intended application requirements. Ensure the component meets all absolute maximum ratings for the target operating environment before integration into the final design.

Single Bipolar Transistors Selection Notes

Select this component when a high-current NPN switch with low saturation voltage is required. The Y grade provides higher DC current gain suitable for efficient drive stages. Consider the complementary 2SA1020 for push-pull configurations. Evaluate thermal management needs due to the 900 mW dissipation rating in the TO-92MOD package.

Single Bipolar Transistors Part Context

This part belongs to the 2SC2655 series of NPN silicon transistors designed for general-purpose power amplification and switching. The series is characterized by its robust construction and fast switching times. It serves as a standard discrete solution for driving loads in consumer electronics and industrial control systems where moderate power handling is necessary.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA1020 as the complementary PNP counterpart. No other direct substitute part numbers are documented in the provided source material.

2SC2655-Y,T6F(J2SC2655-Y,T6F(J

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