2SC2655-Y(T6OMI,FM

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SC2655-Y(T6OMI,FM is a silicon NPN epitaxial planar transistor utilizing the PCT process. It features a JEDEC TO-92MOD package with a maximum collector current of 2 A and a collector-emitter breakdown voltage of 50 V. The device offers a high collector power dissipation rating of 900 mW at 25°C ambient temperature. Electrical characteristics include a low saturation voltage of 0.5 V maximum at 1 A collector current and a transition frequency of 100 MHz typical. The Y suffix indicates a DC current gain (hFE) classification of 120 to 240 at 0.5 A.

Single Bipolar Transistors Feature Summary

• Low saturation voltage for efficient power switching
• High-speed switching capability with short storage time
• High collector power dissipation rating

Single Bipolar Transistors Applications

• Power amplifier circuits
• General power switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm environmental compliance status, such as RoHS compatibility, and exact binning classifications. Confirm that the TO-92MOD physical dimensions match the target PCB footprint requirements before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring an NPN transistor with a minimum hFE of 120 at 0.5 A collector current. Ensure the design accommodates the 900 mW power dissipation limit and applies appropriate thermal derating for operating temperatures exceeding 25°C. Verify that the 50 V voltage ratings meet the circuit's peak operational demands.

Single Bipolar Transistors Part Context

This part belongs to the 2SC2655 series of general-purpose NPN transistors manufactured by Toshiba Semiconductor and Storage. It is designed as a complementary pair to the 2SA1020 PNP transistor. The device utilizes an epitaxial planar structure optimized for reliable performance in standard industrial and consumer electronics environments.

Single Bipolar Transistors Replacement Considerations

The 2SA1020 serves as the complementary PNP counterpart within the same product family. Cross-referencing with other generic NPN transistors requires verifying matching hFE bins, saturation voltages, and package pinouts to ensure functional equivalence.

Single Bipolar Transistors FAQ

What is the DC current gain range for the Y suffix?

The Y suffix denotes a DC current gain (hFE) classification ranging from 120 to 240 when measured at a collector current of 0.5 A.

What is the maximum collector power dissipation?

The maximum collector power dissipation is rated at 900 mW under conditions where the ambient temperature is 25°C.

Is this transistor suitable for high-frequency amplification?

Yes, it features a typical transition frequency of 100 MHz, making it suitable for certain high-frequency signal processing tasks.