2SC2655-Y(T6STL,FM

Single Bipolar Transistors Overview

The Toshiba 2SC2655 is an NPN silicon epitaxial planar transistor utilizing the PCT process, housed in a JEDEC TO-92MOD package. It features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 2 A. The device supports a collector power dissipation of 900 mW at 25°C ambient temperature. Electrical characteristics include a low saturation voltage of 0.5 V (max) at 1 A, a transition frequency of 100 MHz, and a storage time of 1.0 μs. The 'Y' suffix indicates a DC current gain range of 120 to 240.

Single Bipolar Transistors Feature Summary

• Low saturation voltage for efficient switching performance
• High-speed switching capability with short storage times
• Complementary pairing available with the 2SA1020 PNP transistor

Single Bipolar Transistors Applications

• Power amplifier circuits
• General-purpose power switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation to confirm environmental compliance status, such as RoHS compatibility or lead-free composition. Confirm that the intended application falls within general electronics use cases, as the component is restricted from high-reliability sectors like aerospace or medical equipment without explicit permission.

Single Bipolar Transistors Selection Notes

Select this component when a high-current NPN switch with low saturation voltage is required. Ensure the design accommodates the 900 mW power dissipation limit and derating requirements at elevated temperatures. Verify that the hFE classification matches the circuit's base drive requirements, specifically noting the Y grade provides higher gain than standard grades.

Single Bipolar Transistors Part Context

This component belongs to the family of small-signal and medium-power bipolar junction transistors designed for robust switching and amplification tasks. Manufactured using Toshiba's PCT (Planar Chip Transistor) technology, it offers improved reliability and thermal stability compared to older planar processes. The TO-92MOD package facilitates through-hole mounting on printed circuit boards.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA1020 as the complementary PNP counterpart. Direct replacements should match the 50V/2A ratings and TO-92MOD footprint while verifying equivalent saturation voltages and current gain specifications.

Single Bipolar Transistors FAQ

What is the DC current gain range for the 2SC2655-Y variant?

The 'Y' suffix designation corresponds to a minimum DC current gain (hFE) of 120 and a maximum of 240 when tested at IC = 0.5 A and VCE = 2 V.

Is this transistor suitable for nuclear or aerospace applications?

No. The product is strictly prohibited for unintended uses including nuclear facilities, aerospace equipment, medical devices, and automotive safety systems unless expressly permitted by Toshiba.

What is the maximum allowable junction temperature?

The absolute maximum rating for the junction temperature (Tj) is 150 °C.