2SC2668-O-AP

Single Bipolar Transistors Overview

The MCC 2SC2668-O-AP is an NPN plastic-encapsulated transistor designed for high-frequency and low-noise applications. It features a collector-emitter voltage of 30 V, continuous collector current of 20 mA, and power dissipation of 200 mW. The device exhibits a transition frequency of 550 MHz and a noise figure of 5 dB at 100 MHz. Electrical characteristics include a DC current gain (hFE) range of 70 to 140 for the 'O' rank, reverse transfer capacitance of 0.7 pF, and a collector-base time constant of 30 ps. Operating temperatures span from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• Optimized for high-frequency operation with a transition frequency of 550 MHz
• Provides low noise performance suitable for sensitive signal amplification
• Small reverse transfer capacitance minimizes feedback effects in RF circuits
• Epoxy material meets UL 94 V-0 flammability rating standards

Single Bipolar Transistors Applications

• FM, RF, and IF amplifier stages
• High-frequency signal processing circuits
• Low-noise pre-amplifier designs

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm packaging type and compliance attributes. The '-AP' suffix indicates ammo packing, while '-HF' denotes halogen-free composition. Ensure procurement channels are authorized distributors to guarantee genuine parts with full traceability and adherence to MCC quality standards for handling and storage.

Single Bipolar Transistors Selection Notes

Select this component when circuit requirements demand low noise figures and high transition frequencies within a TO-92S package. The 'O' rank provides a specific DC current gain range of 70 to 140. Consider the maximum collector current limit of 20 mA and power dissipation constraints during thermal design. Verify that the required operating temperature range aligns with the specified junction and storage limits.

Single Bipolar Transistors Part Context

This part belongs to the 2SC2668 series of NPN plastic-encapsulated transistors manufactured by Micro Commercial Components. The series includes variants distinguished by hFE ranking suffixes such as Y, O, and R. These devices are engineered for small-signal amplification tasks requiring stable performance at radio frequencies.

Single Bipolar Transistors Replacement Considerations

Compatible substitutes include the 2SC2668-Y and 2SC2668-R variants from the same manufacturer family. Cross-manufacturer replacements must match the TO-92S package, 30 V VCEO rating, and comparable fT and NF specifications.

Single Bipolar Transistors FAQ

What is the DC current gain range for the 2SC2668-O variant?

The 'O' rank specifies a DC current gain (hFE) range of 70 to 140 under test conditions of VCE=6V and IC=1mA.

How does the packaging suffix affect the product?

The '-AP' suffix indicates the device is supplied in ammo packing. Adding '-HF' to the part number designates a halogen-free version of the component.

What is the maximum collector-base breakdown voltage?

The maximum collector-base breakdown voltage (V(BR)CBO) is rated at 40 V with an emitter current of 0 and collector current of 100μA.