2SC2712-GR,LF

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SC2712-GR,LF is a general-purpose NPN bipolar junction transistor (BJT) designed for surface-mount applications. It features a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 150 mA. The device operates with a transition frequency of 80 MHz and a maximum power dissipation of 150 mW. Key electrical characteristics include a DC current gain (hFE) of at least 70 at 2 mA and 6 V, and a collector-emitter saturation voltage of 250 mV at 100 mA collector current. It is housed in an S-Mini (SOT-23-3) package and supports a junction temperature up to 125°C.

Single Bipolar Transistors Feature Summary

• NPN single bipolar transistor configuration optimized for low-power surface-mount integration
• High-speed switching capability supported by 80 MHz transition frequency
• Low saturation voltage ensures efficient performance in saturated switching states
• RoHS compliant construction suitable for environmentally regulated manufacturing processes

Single Bipolar Transistors Applications

• General-purpose signal switching circuits
• Low-power amplifier stages
• Driver circuits for small loads
• Logic interface buffering

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official Toshiba documentation to confirm exact binning or marking variations. Ensure the ordering part number matches the required hFE grade and packaging format. Confirm RoHS compliance status directly from the manufacturer's latest datasheet revision. Validate that the supplier provides genuine components with traceable origin. Check for any recent product change notices affecting pinout or specifications.

Single Bipolar Transistors Selection Notes

Select this component when a compact NPN switch is required for low-voltage, low-current applications. The S-Mini package suits space-constrained designs. Verify that the 50 V breakdown voltage meets circuit requirements. Consider the 150 mA current limit for load driving capabilities. Ensure thermal management aligns with the 150 mW power dissipation rating in the intended enclosure.

Single Bipolar Transistors Part Context

This part belongs to the 2SC2712 series of general-purpose NPN transistors manufactured by Toshiba Semiconductor and Storage. The series offers standardized performance for common discrete semiconductor tasks. Variants within the series may differ in suffix codes indicating specific testing bins or packaging options. The technology utilizes silicon planar epitaxial structure for reliable operation.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing requires consulting official Toshiba replacement guides or equivalent manufacturer datasheets for compatible NPN SOT-23 devices with matching electrical ratings.