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2SC2712-GR,LXHF is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 50V 0.15A S-MINI. Review the specifications below when checking this part for your BOM.
The Toshiba Semiconductor and Storage 2SC2712-GR,LF is a general-purpose NPN bipolar junction transistor (BJT) designed for low-frequency and audio frequency amplifier applications. It features a maximum collector current of 150 mA and a collector-emitter breakdown voltage of 50 V. The device operates with a transition frequency of 80 MHz and a maximum power dissipation of 150 mW. It is housed in an S-Mini (SOT-23) surface-mount package and supports a junction temperature up to 125°C.
Verify the suffix 'LXHF' against official Toshiba documentation, as standard listings typically use 'GR,LF' or 'BL,LF'. Confirm RoHS compliance status and specific binning requirements directly with the manufacturer or authorized distributors to ensure component equivalence.
Select this component for applications requiring moderate voltage handling and small-signal amplification in compact form factors. Ensure the design accounts for the 150 mW power dissipation limit and verify that the 80 MHz transition frequency meets the circuit's bandwidth requirements.
This part belongs to the Toshiba 2SC2712 series of NPN transistors, which are widely used in consumer electronics and industrial control systems. The series is characterized by its reliability in general-purpose discrete semiconductor roles, often replacing older through-hole equivalents in modern surface-mount PCB layouts.
Official substitutes include the 2SC2712-BL,LF and 2SC2712-Y,LF variants from Toshiba. Cross-brand replacements should match the SOT-23 package, 50V VCEO rating, and 150mA Ic specifications.
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