Single Bipolar Transistors 2SC2712-Y,LF product image

2SC2712-Y,LF

$0.14
  • Description:TRANS NPN 50V 0.15A S-MINI
  • Series:-

SKU:49674f6965c5 Category: Brand:

  
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2SC2712-Y,LF is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 50V 0.15A S-MINI. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2712-Y,LF

  • Description:TRANS NPN 50V 0.15A S-MINI
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):150 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 2mA, 6V
  • Power - Max:150 mW
  • Frequency - Transition:80MHz
  • Operating Temperature:125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:S-Mini
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC2712-Y,LF

2SC2712-Y,LF

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SC2712-Y,LF is a single NPN silicon epitaxial planar small-signal bipolar junction transistor designed for surface-mount applications. It operates with a maximum collector current of 150 mA and a collector-emitter breakdown voltage of 50 V. The device features a DC current gain (hFE) ranging from 120 to 240 under standard test conditions. Key electrical parameters include a collector-base voltage of 60 V, an emitter-base voltage of 5 V, and a transition frequency of 80 MHz. Power dissipation is rated at 150 mW, with a maximum operating temperature of +125°C.

Single Bipolar Transistors Feature Summary

  • Utilizes silicon epitaxial planar technology for reliable small-signal amplification
  • Provides high DC current gain with defined grading ranges for consistent performance
  • Features low noise characteristics suitable for sensitive audio and signal processing circuits
  • Designed in a compact S-Mini package for efficient surface-mount assembly

Single Bipolar Transistors Applications

  • General-purpose amplifier circuits
  • Audio frequency signal processing
  • Switching applications in consumer electronics
  • Motor control boards for home appliances

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official Toshiba documentation to confirm exact binning and environmental compliance. Ensure the ordering part number matches the required hFE grade and packaging format. Cross-reference datasheets for absolute maximum ratings before integration. Confirm RoHS status and moisture sensitivity levels for your manufacturing process requirements.

Single Bipolar Transistors Selection Notes

Select this component when a general-purpose NPN transistor with moderate gain and low noise is required in a small surface-mount footprint. Consider the complementary PNP type 2SA1162 for push-pull configurations. Evaluate the thermal management needs relative to the 150 mW power dissipation limit. Verify that the 50 V collector-emitter voltage rating meets the circuit's operational demands.

Single Bipolar Transistors Part Context

The 2SC2712 series represents a long-standing line of small-signal transistors originally introduced by Toshiba. This specific variant belongs to the general-purpose discrete semiconductor category. It is widely utilized in various electronic assemblies due to its standardized pinout and reliable switching characteristics. The component is part of a broader family including different gain grades and packaging options.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.

2SC2712-Y,LF2SC2712-Y,LF
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