Single Bipolar Transistors 2SC2713-BL,LF product image

2SC2713-BL,LF

$0.20
  • Description:TRANS NPN 120V 0.1A TO-236
  • Series:-

SKU:95dd51510a41 Category: Brand:

  
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2SC2713-BL,LF is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 120V 0.1A TO-236. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2713-BL,LF

  • Description:TRANS NPN 120V 0.1A TO-236
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):120 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:350 @ 2mA, 6V
  • Power - Max:150 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:TO-236
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC2713-BL,LF

2SC2713-BL,LF

Single Bipolar Transistors Overview

The 2SC2713-BL,LF is an NPN silicon epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. Designed for audio frequency general-purpose amplifier applications, it features a high collector-emitter voltage rating of 120 V. The device offers a high current gain (hFE) range of 200 to 700 and maintains excellent linearity, with an hFE ratio of 0.95 at specified currents. It exhibits low noise characteristics, typically 1 dB, and serves as the complementary counterpart to the 2SA1163 PNP transistor.

Single Bipolar Transistors Feature Summary

  • High voltage capability with a 120 V collector-emitter breakdown rating
  • Excellent hFE linearity ensuring consistent amplification performance across operating ranges
  • Low noise figure suitable for sensitive audio signal processing
  • Complementary pairing with 2SA1163 for push-pull circuit configurations

Single Bipolar Transistors Applications

  • Audio frequency general-purpose amplifiers
  • Low-noise pre-amplifier stages
  • Push-pull output circuits using complementary PNP/NPN pairs

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'BL,LF' against the manufacturer's official datasheet to confirm lead-free compliance and binning specifications. Ensure the component source is authorized to guarantee authenticity and adherence to RoHS standards. Cross-reference the complementary 2SA1163 availability if designing paired circuits.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high voltage handling in small packages alongside low noise performance. The high hFE range reduces biasing complexity. Verify thermal management requirements for the intended package type. Confirm compatibility with the 2SA1163 if symmetrical drive is required for the application.

Single Bipolar Transistors Part Context

This transistor belongs to Toshiba's lineup of audio frequency general-purpose amplifiers. It is engineered for compact designs where high voltage and low noise are critical. The device complements the 2SA1163, forming a matched pair for efficient audio output stages. Its epitaxial planar construction ensures reliability in consumer and industrial audio equipment.

Single Bipolar Transistors Replacement Considerations

The 2SC2713-GR is a documented variant within the same product family offering identical electrical characteristics. Designers may consider this alternative if supply constraints exist, provided the pinout and package dimensions remain compatible with the existing footprint.

2SC2713-BL,LF2SC2713-BL,LF
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