2SC2714-O(TE85L,F)

2SC2714-O(TE85L,F)

$0.43
  • Description:RF TRANS NPN 30V 550MHZ S MINI
  • Series:-

SKU:7fd96a768b37 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 30V 550MHZ S MINI
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):30V
  • Frequency - Transition:550MHz
  • Noise Figure (dB Typ @ f):2.5dB @ 100MHz
  • Gain:23dB
  • Power - Max:100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 1mA, 6V
  • Current - Collector (Ic) (Max):20mA
  • Operating Temperature:125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:S-Mini
  • Grade:-
  • Qualification:-

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2SC2714-O(TE85L,F)

Overview

The 2SC2714-O(TE85L,F) is a silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. Designed for voltage-controlled oscillator (VCO) applications, it operates with a collector-emitter voltage of 10V and a collector current limit of 60mA. The device dissipates up to 100mW of power at a junction temperature of 125°C. It utilizes a surface-mount package suitable for automated assembly in compact electronic circuits.

Feature Summary

  • Optimized for high-frequency VCO circuit integration
  • Epitaxial planar construction for stable performance
  • Surface-mount design for compact PCB layouts

Applications

  • Voltage-controlled oscillators (VCO)
  • RF signal generation circuits
  • High-frequency amplifier stages

Procurement Notes

Verify the specific ordering suffix TE85L,F against the manufacturer's latest documentation to ensure correct tape-and-reel packaging specifications. Confirm that the component meets RoHS compliance requirements for the intended market. Cross-reference the part number with official Toshiba Semiconductor and Storage catalogs to validate availability status before finalizing procurement plans.

Selection Notes

Select this component when designing circuits requiring an NPN transistor with a 10V collector-emitter breakdown voltage and 60mA continuous current capability. Ensure the application operates within the 100mW power dissipation limit and does not exceed the 125°C maximum junction temperature. Verify that the SOT-343 compatible package dimensions fit the target board layout constraints.

Part Context

This component belongs to the 2SC series of NPN transistors from Toshiba Semiconductor and Storage. These devices are engineered for general-purpose switching and amplification tasks, with specific variants optimized for radio frequency operations. The 2SC2714 variant specifically targets microwave and RF applications requiring low noise and stable gain characteristics.

Replacement Considerations

Publicly confirmed substitute part numbers for this specific model were not identified in available documentation. Engineers should consult Toshiba Semiconductor and Storage for direct equivalents or verify pin-compatible alternatives through independent datasheet comparison.

2SC2714-O(TE85L,F)2SC2714-O(TE85L,F)
$0.43
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