2SC2812-6-TB-E

Single Bipolar Transistors Overview

The Sanyo 2SC2812-6-TB-E is an RF small signal bipolar transistor designed for ultra-high frequency applications. It is a silicon NPN device configured as two separate elements within a single MCP6 package. The component supports a maximum collector current of 0.02 A and operates with a collector-emitter voltage rating of 8 V. Key electrical characteristics include a maximum power dissipation of 0.15 W and a base-collector capacitance of 0.7 pF. The unit utilizes a plastic epoxy small outline surface-mount package with six gull-wing terminals.

Single Bipolar Transistors Feature Summary

• Dual-element configuration integrating two separate NPN transistors into a single compact package
• Optimized for ultra-high frequency band operations using silicon technology
• Low parasitic capacitance design suitable for sensitive RF signal processing

Single Bipolar Transistors Applications

• Ultra-high frequency radio circuits
• RF signal amplification stages
• Small signal processing in communication equipment

Single Bipolar Transistors Procurement Notes

Verify the manufacturer origin, as Sanyo Semiconductor is now part of Semieo. Confirm the specific suffix matches the MCP6 package and pinout requirements. Ensure the component meets RoHS compliance standards if required by the target assembly process. Cross-reference datasheet parameters against the specific application frequency range to validate performance suitability.

Single Bipolar Transistors Selection Notes

Select this component when a dual NPN configuration is required in a minimal footprint for UHF applications. The low capacitance value supports high-frequency integrity. Consider the 0.15 W power dissipation limit during thermal design. Verify that the 8 V voltage rating aligns with the circuit's operating conditions.

Single Bipolar Transistors Part Context

This component belongs to the family of RF small signal bipolar transistors manufactured by Sanyo (Semieo). It is distinct from general-purpose switching transistors due to its specific optimization for ultra-high frequency bands. The MCP6 package provides a standardized form factor for surface-mount assembly in dense electronic designs.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.