2SC2837

Single Bipolar Transistors Overview

The Sanken 2SC2837 is a silicon NPN epitaxial planar transistor designed for linear amplifier applications. It features a collector-to-emitter voltage (VCEO) of 150 V and a continuous collector current (IC) rating of 10 A. The device offers a maximum power dissipation (PC) of 100 W at 25 °C case temperature, with a transition frequency (fT) of 70 MHz. It maintains constant hFE characteristics across a wide current range to support high-quality audio performance.

Single Bipolar Transistors Feature Summary

• Designed as a Linear Amplifier Power Transistor (LAPT) for high-fidelity audio applications
• Provides consistent DC current gain (hFE) across a broad collector current spectrum
• High transition frequency suitable for demanding signal processing tasks
• Complementary pairing available with the 2SA1186 PNP transistor

Single Bipolar Transistors Applications

• Audio power amplifiers
• Linear amplifier circuits requiring high current handling
• General purpose electronic equipment components

Single Bipolar Transistors Procurement Notes

Verify component authenticity against official Sanken Electric documentation prior to integration. Confirm that the specific lot number and hFE rank markings on the TO3P-3L package align with project requirements. Ensure compliance with RoHS standards regarding the bare lead frame composition. Review the manufacturer's safety guidelines for thermal management and derating practices before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring robust NPN switching or linear amplification up to 10 A. Consider the complementary 2SA1186 for balanced push-pull configurations. Evaluate thermal resistance parameters to ensure adequate heat sinking for the 100 W dissipation rating. Verify that the 150 V breakdown voltage meets the circuit's peak operating demands without excessive margin loss.

Single Bipolar Transistors Part Context

This device belongs to Sanken Electric’s lineup of discrete power transistors engineered for consumer audio electronics. It utilizes an epitaxial planar process to achieve reliable performance in TO3P-3L packages. The product is explicitly marked as not recommended for new designs, indicating potential phase-out status or replacement by newer series within the manufacturer's portfolio.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SA1186 as the complementary PNP counterpart. No other direct substitute part numbers are documented in the provided source material. Designers should consult Sanken Electric directly for updated recommendations if this component is no longer supported for new projects.

Single Bipolar Transistors FAQ

What is the maximum collector-to-emitter voltage for the 2SC2837?

The maximum collector-to-emitter voltage (VCEO) is rated at 150 V.

Does the 2SC2837 have a specific hFE ranking system?

Yes, the device is available in hFE ranks O, P, and Y, corresponding to gain ranges of 50–100, 70–140, and 90–180 respectively.

Is the 2SC2837 suitable for aerospace or medical applications?

No, the datasheet explicitly states it is not intended for specific applications such as aerospace equipment, nuclear power control systems, or Class III medical devices.