Single Bipolar Transistors 2SC2909S product image

2SC2909S

$0.06
  • Description:TRANS NPN 160V 0.07A 3-NP
  • Series:-

SKU:9a39b8a4f454 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

2SC2909S is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 160V 0.07A 3-NP. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC2909S

  • Description:TRANS NPN 160V 0.07A 3-NP
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):70 mA
  • Voltage - Collector Emitter Breakdown (Max):160 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 3mA, 30mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:140 @ 10mA, 5V
  • Power - Max:600 mW
  • Frequency - Transition:150MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:3-NP
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC2909S

2SC2909S

Single Bipolar Transistors Overview

The onsemi 2SC2909S is a high-voltage NPN bipolar junction transistor (BJT) designed for switching and audio pre-driver applications. It features an FBET process for fast switching speed and excellent linearity. Key electrical parameters include a collector-emitter voltage (Vceo) of 160V, a maximum collector current (Ic) of 70mA, and a total power dissipation (Pc) of 600mW. The device operates with a transition frequency (ft) of 150 MHz and has a small collector-base capacitance (Cob). It is housed in a TO-226-3 (TO-92-3) package.

Single Bipolar Transistors Feature Summary

  • Adoption of FBET process for enhanced performance
  • High breakdown voltage capability
  • Excellent hFE linearity and small Cob
  • Fast switching speed characteristics

Single Bipolar Transistors Applications

  • High-voltage switching circuits
  • Audio frequency (AF) pre-driver stages
  • 60W amplifier driver applications

Single Bipolar Transistors Procurement Notes

Verify the manufacturer origin carefully, as the 2SC2909 series was originally developed by Sanyo Semicon Device. Ensure the specific suffix matches the required pinout and thermal specifications. Confirm that the TO-226-3 package variant aligns with your board layout requirements before finalizing orders.

Single Bipolar Transistors Selection Notes

Select this component when high-voltage handling up to 160V is required alongside moderate current capabilities. The low collector capacitance makes it suitable for high-frequency switching tasks. Consider the thermal resistance of the TO-226-3 package for heat dissipation needs in compact designs.

Single Bipolar Transistors Part Context

This part belongs to the discrete single BJT category within onsemi's portfolio. It serves as a replacement or alternative for legacy Sanyo components. The device is distinct from general-purpose low-voltage transistors due to its specific high-voltage rating and audio application focus.

Single Bipolar Transistors Replacement Considerations

Direct substitutes may include other NPN BJTs with similar Vceo and Ic ratings. Verify pin compatibility and thermal characteristics when cross-referencing with generic equivalents.

2SC2909S2SC2909S
$0.06
Buy Now