2SC3070-AE

Single Bipolar Transistors Overview

The Sanyo 2SC3070-AE is an NPN epitaxial planar silicon bipolar junction transistor designed for high-gain, low-frequency general-purpose amplifier applications. It features a maximum collector current of 1.2 A and a collector-emitter voltage rating of 25 V. The device offers a high DC current gain (hFE) ranging from 800 to 3200, ensuring efficient signal amplification with minimal base drive requirements. With a cutoff frequency of 250 MHz and a power dissipation capacity of 1 W in a through-hole package, it supports stable operation in audio and intermediate frequency stages.

Single Bipolar Transistors Feature Summary

• High DC current gain (hFE=800 to 3200)
• Large current capacity (IC=1.2A)
• NPN epitaxial planar silicon construction

Single Bipolar Transistors Applications

• Low-frequency general-purpose amplifiers
• Audio signal amplification stages
• Intermediate frequency (IF) amplification

Single Bipolar Transistors Procurement Notes

Verify the manufacturer source, as Sanyo Semiconductor assets were acquired by ON Semiconductor. Confirm that the 'AE' suffix denotes RoHS compliance and lead-free status per official documentation. Ensure the component matches the original Sanyo specifications rather than generic equivalents. Request datasheets confirming the hFE range and thermal characteristics to validate performance against design requirements before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when high current gain is critical for low-level signal amplification. The 25 V voltage rating limits suitability to low-voltage circuits. Consider the 1.2 A current capacity for moderate load driving. The through-hole package aids in prototyping and high-power thermal management compared to surface-mount alternatives. Evaluate thermal resistance requirements for continuous operation at full load.

Single Bipolar Transistors Part Context

The 2SC3070 series belongs to Sanyo's lineup of medium-power NPN transistors optimized for analog signal processing. It serves as a standard solution for general-purpose amplification where high beta values reduce biasing complexity. The epitaxial planar technology ensures reliable switching and linear operation. This part number represents a specific variant within the broader 2SC3070 family, tailored for compliance and specific gain binning.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with ON Semiconductor equivalents if sourcing from post-acquisition channels. Cross-reference pinouts and electrical parameters carefully when considering alternative manufacturers.