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2SC3142-4-TB-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is BIP NPN 30MA 20V. Review the specifications below when checking this part for your BOM.
Single Bipolar Transistors specifications for 2SC3142-4-TB-E
- Description：BIP NPN 30MA 20V
- Series：*
- Mfr：onsemi
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Single Bipolar Transistors datasheet and documents for 2SC3142-4-TB-E
Single Bipolar Transistors Overview
The 2SC3142-4-TB-E is an NPN epitaxial planar silicon bipolar junction transistor manufactured by onsemi. It belongs to the FBET series, designed for high-frequency general-purpose amplifier applications. The component utilizes a compact surface mount package to facilitate set miniaturization. Key electrical specifications include a collector current rating of 30mA and a collector-emitter breakdown voltage of 20V. These parameters define its operational limits within low-power signal processing circuits.
Single Bipolar Transistors Feature Summary
- NPN epitaxial planar silicon construction
- Optimized for high-frequency general-purpose amplification
- Compact surface mount packaging design
Single Bipolar Transistors Applications
- Inverter circuits
- Interface drivers
- Muting functions
Single Bipolar Transistors Procurement Notes
Verify the manufacturer part number against official onsemi documentation to ensure authenticity. Confirm that the received components match the specified NPN configuration and package type. Check datasheets for exact electrical tolerances relevant to your specific circuit requirements before integration.
Single Bipolar Transistors Selection Notes
Select this component when a small-form-factor NPN transistor is required for high-frequency signal amplification. Ensure the application voltage does not exceed the 20V collector-emitter rating and current remains within the 30mA limit. Consider the FBET series benefits for space-constrained designs requiring reliable planar silicon performance.
Single Bipolar Transistors Part Context
This device is part of the FBET series from onsemi, focusing on compactness and high-frequency performance. It serves as a single bipolar transistor solution for modern electronics where size reduction is critical. The technology supports efficient signal handling in portable and miniaturized consumer devices.
Single Bipolar Transistors Replacement Considerations
Consult official substitution guides for compatible equivalents. Verify pinout compatibility and electrical parameter alignment with the original specification before replacing.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.
