2SC3225,T6ALPSF(M

Single Bipolar Transistors Overview

The Toshiba 2SC3225 is a silicon NPN epitaxial planar transistor designed for switching applications. It features a high DC current gain of 500 (minimum) at IC = 400 mA and a low collector-emitter saturation voltage of 0.5 V maximum at IC = 300 mA. The device supports a continuous collector current of 2 A and a collector power dissipation of 900 mW. Key electrical characteristics include a collector-base voltage rating of 40 V, an emitter-base voltage rating of 7 V, and a transition frequency of 220 MHz typical. It operates within a junction temperature range of -55°C to 150°C.

Single Bipolar Transistors Feature Summary

• High DC current gain capability
• Low collector-emitter saturation voltage
• Suitable for solenoid drive applications

Single Bipolar Transistors Applications

• Switching Applications
• Solenoid Drive Applications
• General electronics applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status through official Toshiba channels or authorized distributors, as the datasheet indicates environmental compliance depends on specific lot markings. Confirm package type JEDEC TO-92MOD matches design requirements. Review the Toshiba Semiconductor Reliability Handbook for derating concepts before finalizing designs. Ensure application parameters remain within absolute maximum ratings to maintain product reliability.

Single Bipolar Transistors Selection Notes

Select this component when high DC current gain and low saturation voltage are required for efficient switching operations. The 2A collector current rating makes it suitable for moderate load driving tasks. Consider the TO-92MOD package for standard through-hole mounting configurations. Evaluate thermal management needs based on the 900 mW power dissipation limit and ambient operating conditions.

Single Bipolar Transistors Part Context

The 2SC3225 belongs to Toshiba's lineup of silicon NPN epitaxial transistors intended for general-purpose switching and driver-stage applications. It complements other discrete semiconductor devices used in industrial and consumer electronics. The component utilizes a planar process technology to ensure stable performance across varying temperature ranges and operational loads.

Single Bipolar Transistors Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

Single Bipolar Transistors FAQ

What is the minimum DC current gain specified for the 2SC3225?

The minimum DC current gain (hFE) is 500, measured at a collector current of 400 mA.

What is the maximum collector-emitter saturation voltage?

The maximum collector-emitter saturation voltage (VCE(sat)) is 0.5 V when the collector current is 300 mA.

Is the 2SC3225 suitable for use in aerospace or medical equipment?

No, the product is not intended for unintended uses such as aerospace, medical equipment, or nuclear facilities unless specifically permitted by Toshiba.