2SC3303-Y(T6L1,NQ)

$1.59

Description：TRANS NPN 80V 5A PW-MOLD
Series：-

SKU:58a25fc0a401 Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SC3303-Y(T6L1,NQ) is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 80V 5A PW-MOLD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC3303-Y(T6L1,NQ)

Description：TRANS NPN 80V 5A PW-MOLD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Current - Collector (Ic) (Max)：5:00 AM
Voltage - Collector Emitter Breakdown (Max)：80 V
Vce Saturation (Max) @ Ib, Ic：400mV @ 150mA, 3A
Current - Collector Cutoff (Max)：1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1A, 1V
Power - Max：1 W
Frequency - Transition：120MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
Supplier Device Package：PW-MOLD
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC3303-Y(T6L1,NQ)

2SC3303-Y(T6L1,NQ)

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SC3303 is a silicon NPN epitaxial axial transistor utilizing the PCT process, designed for high current switching applications. It features a collector-emitter voltage of 80 V and a continuous collector current rating of 5 A. The device achieves a low collector saturation voltage of 0.4 V maximum at 3 A and exhibits a typical storage time of 1.0 μs. Electrical characteristics include a DC current gain ranging from 70 to 240 depending on the classification, with a transition frequency of 120 MHz.

Single Bipolar Transistors Feature Summary

Utilizes PCT process technology for robust performance in high current environments
Provides low collector saturation voltage to minimize power dissipation during conduction
Features fast switching times suitable for high-frequency pulse applications

Single Bipolar Transistors Applications

High current switching circuits
DC-DC converter topologies

Single Bipolar Transistors Procurement Notes

Verify component authenticity by checking the marking code 'C3303' against official Toshiba documentation. Confirm RoHS compatibility status through authorized distributors as indicated by lot number markings. Ensure operating conditions remain within absolute maximum ratings to maintain reliability standards specified in the Toshiba Semiconductor Reliability Handbook.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high collector current handling up to 5 A with low saturation losses. Consider the specific hFE classification (O or Y) required for base drive calculations. Evaluate thermal management requirements based on the 1.0 W dissipation rating at 25°C ambient temperature and the safe operating area curves provided in the datasheet.

Single Bipolar Transistors Part Context

This axial leaded transistor belongs to Toshiba's discrete semiconductor portfolio focused on power switching solutions. It serves as a fundamental active element in industrial power conversion systems where reliable high-current control is necessary. The component represents a standard solution for general-purpose high-power switching tasks within electronic equipment design.