Single Bipolar Transistors 2SC33120RA product image

2SC33120RA

  • Description:TRANS NPN 55V 0.1A NS-B1
  • Series:-

SKU:528c126b249a Category: Brand:

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2SC33120RA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is TRANS NPN 55V 0.1A NS-B1. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC33120RA

  • Description:TRANS NPN 55V 0.1A NS-B1
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Box (TB)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):55 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 10mA, 100mA
  • Current - Collector Cutoff (Max):1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:180 @ 2mA, 5V
  • Power - Max:300 mW
  • Frequency - Transition:200MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:3-SIP
  • Supplier Device Package:NS-B1
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC33120RA

2SC33120RA

Single Bipolar Transistors Overview

The Panasonic 2SC3312 is a silicon NPN epitaxial planar transistor designed for low-frequency and low-noise amplification. It features a collector-emitter voltage of 55 V, a collector current of 100 mA, and a power dissipation of 300 mW. The device offers a transition frequency of 200 MHz and a noise voltage of 150 mV at specific test conditions. It is packaged in the NS-B1 configuration with three terminals.

Single Bipolar Transistors Feature Summary

  • Optimized for high-density mounting applications
  • Supports supply via radial taping methods
  • Engineered for low noise voltage performance

Single Bipolar Transistors Applications

  • Low-frequency amplification circuits
  • Low-noise signal processing stages
  • General electronic equipment

Single Bipolar Transistors Procurement Notes

Verify the exact lifecycle status through official Panasonic channels before procurement. Confirm that the component meets all required environmental directives and packaging specifications for your manufacturing process. Ensure compatibility with existing assembly lines regarding the NS-B1 package dimensions and lead configurations.

Single Bipolar Transistors Selection Notes

Select this component when low noise voltage is critical for the application. Consider the 55 V collector-emitter voltage rating and 100 mA current capability for circuit design limits. Evaluate the thermal requirements against the 300 mW power dissipation rating to ensure reliable operation within the specified temperature range.

Single Bipolar Transistors Part Context

This transistor belongs to the family of silicon NPN epitaxial planar devices manufactured by Panasonic Electronic Components. It serves as a complementary counterpart to the 2SA1310 PNP transistor, facilitating push-pull or differential amplifier designs requiring matched characteristics for balanced performance.

Single Bipolar Transistors Replacement Considerations

Consult official documentation for verified substitute part numbers. Cross-referencing requires matching electrical ratings and physical package dimensions to ensure functional equivalence without redesigning the host circuit board.

2SC33120RA2SC33120RA

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