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2SC33120RA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is TRANS NPN 55V 0.1A NS-B1. Review the specifications below when checking this part for your BOM.
The Panasonic 2SC3312 is a silicon NPN epitaxial planar transistor designed for low-frequency and low-noise amplification. It features a collector-emitter voltage of 55 V, a collector current of 100 mA, and a power dissipation of 300 mW. The device offers a transition frequency of 200 MHz and a noise voltage of 150 mV at specific test conditions. It is packaged in the NS-B1 configuration with three terminals.
Verify the exact lifecycle status through official Panasonic channels before procurement. Confirm that the component meets all required environmental directives and packaging specifications for your manufacturing process. Ensure compatibility with existing assembly lines regarding the NS-B1 package dimensions and lead configurations.
Select this component when low noise voltage is critical for the application. Consider the 55 V collector-emitter voltage rating and 100 mA current capability for circuit design limits. Evaluate the thermal requirements against the 300 mW power dissipation rating to ensure reliable operation within the specified temperature range.
This transistor belongs to the family of silicon NPN epitaxial planar devices manufactured by Panasonic Electronic Components. It serves as a complementary counterpart to the 2SA1310 PNP transistor, facilitating push-pull or differential amplifier designs requiring matched characteristics for balanced performance.
Consult official documentation for verified substitute part numbers. Cross-referencing requires matching electrical ratings and physical package dimensions to ensure functional equivalence without redesigning the host circuit board.
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