2SC3328-O,T6KEHF(M

Description：TRANS NPN 80V 2A TO-92MOD
Series：-

SKU:84750626e4fc Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SC3328-O,T6KEHF(M is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 80V 2A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC3328-O,T6KEHF(M

Description：TRANS NPN 80V 2A TO-92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：2:00 AM
Voltage - Collector Emitter Breakdown (Max)：80 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 1A
Current - Collector Cutoff (Max)：1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 500mA, 2V
Power - Max：900 mW
Frequency - Transition：100MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body
Supplier Device Package：TO-92MOD
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC3328-O,T6KEHF(M

2SC3328-O,T6KEHF(M

Single Bipolar Transistors Overview

The Toshiba 2SC3328-O,T6KEHF(M is a silicon NPN epitaxial planar transistor manufactured using the PCT process. It features an absolute maximum collector current of 2 A and a collector-emitter voltage rating of 80 V. The device provides a low saturation voltage of 0.5 V (max) at 1 A and exhibits high-speed switching with a typical storage time of 1.0 μs. It operates within a junction temperature range up to 150 °C and utilizes a JEDEC TO-92MOD package.

Single Bipolar Transistors Feature Summary

Utilizes PCT process for enhanced performance
Provides low collector saturation voltage
Supports high-speed switching operations

Single Bipolar Transistors Applications

Power amplifier applications
Power switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba Semiconductor documentation to confirm environmental compliance status, such as RoHS compatibility, and ensure the exact marking configuration matches project requirements. Confirm that the component meets all applicable export control regulations before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring robust power handling in a compact form factor. Ensure the circuit design accommodates the 900 mW collector power dissipation limit and adheres to derating guidelines provided in the reliability handbook. Verify thermal management strategies to maintain junction temperatures within safe operating limits during continuous operation.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SC3328 series of general-purpose NPN transistors designed for audio and switching circuits. It serves as a complementary device to the 2SA1315 PNP transistor, facilitating push-pull configurations in amplifier stages. The series is engineered for reliable performance in consumer electronics and industrial equipment.