2SC3328-Y,HOF(M

Single Bipolar Transistors Overview

The Toshiba 2SC3328-Y,HOF(M) is a silicon NPN epitaxial transistor manufactured using the PCT process. It features an absolute maximum collector current of 2 A and a collector-emitter breakdown voltage of 80 V. The device provides a DC current gain (hFE) ranging from 120 to 240 at a collector current of 0.5 A. Electrical characteristics include a maximum collector-emitter saturation voltage of 0.5 V at 1 A, a transition frequency of 100 MHz, and a storage time of 1.0 μs. Power dissipation is rated at 900 mW with a junction temperature limit of 150 °C.

Single Bipolar Transistors Feature Summary

• Utilizes PCT process technology for high-speed switching performance
• Designed for low saturation voltage operation in power applications
• Complementary pairing available with the 2SA1315 PNP transistor

Single Bipolar Transistors Applications

• Power amplifier circuits
• High-speed power switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba Semiconductor documentation to confirm environmental compliance status and lot marking conventions. Confirm that the component meets the intended application's reliability requirements by consulting the Toshiba Semiconductor Reliability Handbook. Ensure design parameters remain within the specified absolute maximum ratings to maintain product integrity.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring robust NPN switching capabilities with a 2 A continuous collector current rating. The 80 V breakdown voltage supports moderate voltage levels common in consumer electronics. Consider the complementary 2SA1315 if push-pull configurations are required. Evaluate thermal management strategies to ensure the junction temperature remains below 150 °C during operation.

Single Bipolar Transistors Part Context

This component belongs to the 2SC3328 series of silicon NPN transistors produced by Toshiba Semiconductor and Storage. The series utilizes epitaxial construction optimized for power amplification and switching tasks. The TO-92MOD package provides a standard form factor suitable for through-hole mounting in general electronic equipment.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SA1315 as the complementary PNP counterpart. No other direct substitute part numbers are documented in the provided source material.