2SC3332S-AA

Single Bipolar Transistors Overview

The onsemi 2SC3332S-AA is a single NPN silicon bipolar junction transistor housed in an NP (TO-92) package. It features a collector-emitter breakdown voltage of 160 V and a collector-base voltage of 180 V. The device supports a continuous collector current of 0.7 A with a maximum power dissipation of 700 mW at 25°C. Key electrical characteristics include a DC current gain ranging from 140 to 400, a transition frequency of 120 MHz, and a collector-emitter saturation voltage of 0.12 V typical. Operating temperatures range from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability for robust operation
• Excellent hFE linearity across operating ranges
• Wide Safe Operating Area (SOA) resistant to secondary breakdown
• Adoption of MBIT process technology

Single Bipolar Transistors Applications

• High-voltage switching applications
• General-purpose amplifier circuits
• Driver stages requiring high input impedance

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'AA' to confirm bulk box packaging containing 1,500 pieces per box, distinct from bag-packaged variants. Confirm RoHS compliance status as indicated in the datasheet documentation. Ensure the component matches the NP package outline drawing dimensions before integration into existing PCB footprints.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high voltage handling up to 160V combined with moderate current capabilities. The wide SOA makes it suitable for inductive load switching where transient stability is critical. Consider the TO-92 package constraints regarding thermal dissipation limits when designing heat management strategies for continuous operation.

Single Bipolar Transistors Part Context

This part belongs to the 2SC3332 series manufactured by onsemi using MBIT process technology. It is functionally equivalent to other industry-standard NPN transistors designed for general-purpose high-voltage switching. The device is commonly utilized in consumer electronics and industrial control systems requiring reliable amplification or switching performance.

Single Bipolar Transistors Replacement Considerations

Cross-reference with 2SC3332S or 2SC3332T for identical electrical specifications but different packaging quantities. Verify pinout compatibility (Emitter-Collector-Base) against potential substitutes to ensure correct circuit integration without modification.

Single Bipolar Transistors FAQ

What is the maximum collector current rating?

The absolute maximum collector current (IC) is rated at 0.7 A, with a pulse current capability of 1.5 A.

How is the DC current gain classified?

The device is classified into ranks based on hFE measured at IC=100mA and VCE=5V, with Rank S covering 140-280 and Rank T covering 200-400.

What is the typical collector-emitter saturation voltage?

The typical VCE(sat) is 0.12 V when tested at IC=250mA and IB=25mA.