Single Bipolar Transistors 2SC3332S product image

2SC3332S

$0.14
  • Description:TRANS NPN 160V 0.7A 3-NP
  • Series:-

SKU:f9b9d6bd6808 Category: Brand:

  
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2SC3332S is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 160V 0.7A 3-NP. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC3332S

  • Description:TRANS NPN 160V 0.7A 3-NP
  • Series:-
  • Mfr:onsemi
  • Package:Bulk,Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):700 mA
  • Voltage - Collector Emitter Breakdown (Max):160 V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 25mA, 250mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:140 @ 100mA, 5V
  • Power - Max:700 mW
  • Frequency - Transition:120MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:3-NP
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC3332S

2SC3332S

Single Bipolar Transistors Overview

The onsemi 2SC3332S is a single NPN silicon bipolar junction transistor housed in an NP (TO-92) package. It features a collector-emitter voltage of 160 V and a continuous collector current of 0.7 A, with a peak pulse current rating of 1.5 A. The device dissipates up to 700 mW at 25°C ambient temperature and operates within a junction temperature range of -55°C to +150°C. Electrical characteristics include a DC current gain (hFE) ranging from 140 to 400 at 100 mA, a gain-bandwidth product of 120 MHz, and a collector cutoff current of 0.1 μA.

Single Bipolar Transistors Feature Summary

  • High breakdown voltage capability for robust operation
  • Excellent hFE linearity across operating ranges
  • Wide Safe Operating Area (SOA) resistant to secondary breakdown
  • Adoption of MBIT process technology

Single Bipolar Transistors Applications

  • General purpose switching applications
  • Driver stages for audio frequency amplifiers
  • High voltage switching circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation, as it dictates packaging quantity and shipping format. Confirm component status, as this part may be subject to discontinuation notices. Ensure compatibility with existing PCB footprints and thermal management requirements before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component when high voltage isolation and low saturation voltage are required in a through-hole configuration. Consider the hFE ranking if precise gain control is necessary for the application. Evaluate thermal dissipation limits relative to the expected ambient temperature and duty cycle to ensure reliable long-term performance.

Single Bipolar Transistors Part Context

This device belongs to the 2SC3332 series of NPN transistors manufactured by onsemi. It utilizes the MBIT process to achieve its electrical specifications. The series includes variants such as the 2SC3332T and 2SC3332S-AA, which share similar electrical characteristics but differ in packaging quantities and shipping methods.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical ratings carefully when considering alternative components from other manufacturers.

2SC3332S2SC3332S
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