Single Bipolar Transistors 2SC3332T-AA product image

2SC3332T-AA

$0.14
  • Description:TRANS NPN 160V 0.7A 3-NP
  • Series:-

SKU:8631c71f30cb Category: Brand:

  
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2SC3332T-AA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 160V 0.7A 3-NP. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC3332T-AA

  • Description:TRANS NPN 160V 0.7A 3-NP
  • Series:-
  • Mfr:onsemi
  • Package:Bulk,Tape & Box (TB)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):700 mA
  • Voltage - Collector Emitter Breakdown (Max):160 V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 25mA, 250mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 5V
  • Power - Max:700 mW
  • Frequency - Transition:120MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:3-NP
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC3332T-AA

2SC3332T-AA

Single Bipolar Transistors Overview

The 2SC3332T-AA is an NPN single bipolar junction transistor manufactured by onsemi. It features a collector-emitter voltage of 160 V and a continuous collector current of 0.7 A. The device utilizes the MBIT process to achieve low saturation voltage and wide safe operating area characteristics. Electrical specifications include a DC current gain ranging from 140 to 400 at 100 mA, a transition frequency of 120 MHz, and a maximum power dissipation of 700 mW. The component is housed in an NP package (TO-92/TO-226AA) with a junction temperature rating up to 150 °C.

Single Bipolar Transistors Feature Summary

  • High breakdown voltage capability for robust operation
  • Excellent hFE linearity across operating ranges
  • Wide Safe Operating Area (SOA) resistant to secondary breakdown
  • Adoption of MBIT process technology

Single Bipolar Transistors Applications

  • General-purpose switching circuits
  • Low saturation voltage amplifier stages
  • High-voltage signal processing applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'AA' against official documentation to confirm packaging details, as it indicates bulk box shipping rather than bag packaging. Confirm that the component status remains End-of-Life (EOL) as per manufacturer notices before finalizing procurement plans. Ensure compatibility with existing TO-92 footprint designs.

Single Bipolar Transistors Selection Notes

Select this component when high collector-emitter voltage ratings are required alongside low saturation voltage performance. The MBIT process ensures reliable operation within a wide SOA. Verify that the required DC current gain falls within the specified S or T ranks. Consider the thermal management requirements given the 700 mW power dissipation limit in the NP package.

Single Bipolar Transistors Part Context

This part belongs to the 2SC3332 series of NPN transistors designed for general-purpose applications. The series includes variants such as 2SC3332S and 2SC3332T, which differ primarily in packaging quantities. The 2SC3332T-AA variant specifically denotes the tape-and-reel or box packaging configuration for automated assembly processes.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other parts from the same family such as 2SC3332S-AA, provided the packaging quantity matches the production requirement. Cross-reference electrical parameters like VCEO and IC with alternative high-voltage NPN transistors if sourcing new components.

2SC3332T-AA2SC3332T-AA
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