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The CEL 2SC3356-A is an NPN silicon epitaxial RF transistor designed for microwave low-noise amplification. It operates in the Ultra High Frequency band with a collector-to-emitter voltage of 12 V and a maximum collector current of 100 mA. The device provides a typical noise figure of 1.1 dB and a gain bandwidth product of 7 GHz at specified bias conditions. It utilizes a 3-pin Minimold package, which is lead-free compliant.
Verify component authenticity by checking markings against official datasheet specifications. Confirm the presence of the 'A' suffix to ensure compliance with the specific ordering information provided in the documentation. Ensure handling precautions are observed due to electrostatic discharge sensitivity.
Select this component when designing circuits requiring low noise figures around 1.1 dB and high power gain near 11 dB at 1 GHz. Consider the 12 V collector-to-emitter voltage limit and 100 mA maximum collector current when defining operating points. Evaluate thermal dissipation requirements based on the 200 mW total power dissipation rating.
This component is part of the NE85633 / 2SC3356 series manufactured by California Eastern Laboratories (CEL), a business partner of Renesas Electronics Corporation. The datasheet indicates that these products are currently in a phase-out status. The 'A' suffix denotes a specific variant within the 3-pin Minimold package lineup.
Public confirmed substitute part numbers are not available in the provided documentation. As the component is listed as phase-out, alternative sourcing or redesign may be necessary.
The typical noise figure is 1.1 dB at VCE = 10 V, IC = 7 mA, and f = 1 GHz.
The absolute maximum rating for collector-to-base voltage (VCBO) is 20 V.
It uses a 3-pin Minimold package.