2SC3356-T1B-R25-A

Description：RF TRANS NPN 12V 7GHZ SOT-23-3
Series：-

SKU:e286d6a1cca6 Category: Bipolar RF Transistors Brand: CEL

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 12V 7GHZ SOT-23-3
Series：-
Mfr：CEL
Package：Tape & Reel (TR)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：12V
Frequency - Transition：7GHz
Noise Figure (dB Typ @ f)：1.1dB @ 1GHz
Gain：11.5dB
Power - Max：200mW
DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 20mA, 10V
Current - Collector (Ic) (Max)：100mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3
Grade：-
Qualification：-

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2SC3356-T1B-R25-A

Overview

The 2SC3356-T1B-R25-A is an NPN silicon epitaxial RF transistor designed for microwave low-noise amplification in VHF, UHF, and CATV bands. It features a 3-pin Minimold package with a collector face oriented toward the tape perforation. Key electrical characteristics include a maximum collector-to-emitter voltage of 12 V, a maximum collector current of 100 mA, and a total power dissipation of 200 mW at 25°C. The device exhibits a typical noise figure of 1.1 dB and a gain bandwidth product of 7 GHz at 1 GHz frequency.

Feature Summary

Engineered for low noise and high gain applications in microwave circuits
Optimized for operation within VHF, UHF, and CATV frequency bands
Provides high available power gain suitable for signal amplification

Applications

Microwave low-noise amplifier stages
VHF/UHF receiver front-end circuits
CATV band signal processing

Procurement Notes

Verify the specific ordering suffix to confirm the package type and reel quantity. Confirm that the R25 suffix corresponds to the required DC current gain (hFE) classification range of 125 to 250. Ensure compliance with RoHS directives if lead-free versions are required for the assembly process.

Selection Notes

Select this component when designing circuits requiring low noise figures near 1.1 dB at 1 GHz. Verify that the operating collector current falls within the specified ranges for optimal gain and noise performance. Consider the 200 mW power dissipation limit and ensure adequate thermal management for the ambient temperature conditions.

Part Context

This part is manufactured by CEL (California Eastern Laboratories), a business partner of Renesas Electronics Corporation. It shares specifications with the NEC NE85633 series. The datasheet indicates that the base model is currently in a phase-out status, though specific suffixes may still be available.