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The EVVO 2SC3356 is an NPN silicon epitaxial planar transistor designed for UHF band applications. It features a low noise figure of 1.1 dB typ. and high power gain, with a maximum gain of 13 dB at 1.0 GHz. The device supports a collector current of 100 mA and operates within a junction temperature range of -65°C to +150°C. Key electrical parameters include a collector-emitter breakdown voltage of 12 V, a transition frequency of 7 GHz, and a reverse transfer capacitance of 1 pF. It is available in SOT-23 packages with hFE classifications ranging from 50 to 400.
Verify the specific hFE bin (R23, R24, R25, or R26) required for the application design, as gain ranges vary significantly between markings. Confirm package type is SOT-23 and check RoHS compliance status if environmental regulations apply. Ensure sourcing channels provide official datasheets matching the EVVO manufacturer designation.
Select based on required noise figure and gain specifications at 1.0 GHz. Choose the appropriate hFE classification (50-100 up to 250-400) to match biasing requirements. Verify that the 12 V collector-emitter voltage rating meets the circuit's maximum operating conditions. Consider thermal dissipation limits when designing for ambient temperatures above 25°C.
This component belongs to the family of NPN silicon epitaxial planar transistors intended for RF applications. Similar devices often share the 2SC3356 designation across manufacturers like NEC and Renesas, though specific electrical tolerances and marking codes may differ. The EVVO version provides standardized SOT-23 packaging for surface mount integration.
Cross-reference with other 2SC3356 variants from different manufacturers such as NEC or Renesas. Verify pinout compatibility and ensure equivalent noise figures and gain bandwidth products are met before substitution.