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Product Detailed Parameters
- Description：RF TRANS NPN 12V 6.5GHZ SOT-89
- Series：-
- Mfr：CEL
- Package：Strip
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：6.5GHz
- Noise Figure (dB Typ @ f)：1.8dB @ 1GHz
- Gain：9dB
- Power - Max：1.2W
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 20mA, 10V
- Current - Collector (Ic) (Max)：100mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-243AA
- Supplier Device Package：SOT-89
- Grade：-
- Qualification：-
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Overview
The CEL 2SC3357-A is a silicon NPN RF transistor designed for ultra-high frequency applications. It operates in the SOT-89 package and is characterized by low noise figure and high gain, making it suitable for VHF, UHF, and CATV band low noise amplifiers. The device features a maximum collector-emitter voltage of 12 V and a maximum collector current of 0.1 A. Its typical noise figure is 1.8 dB at 1.0 GHz with a gain of 9.0 dB under standard bias conditions.
Feature Summary
- Engineered for low noise amplification in VHF, UHF, and CATV bands
- Provides high gain characteristics for signal integrity
- Utilizes a compact SOT-89 surface-mount package
Applications
- Low noise amplifier stages for VHF receivers
- Low noise amplifier stages for UHF receivers
- Signal conditioning in CATV band systems
Procurement Notes
Verify the specific manufacturer source when ordering, as multiple vendors produce this part number. Confirm that the component meets RoHS compliance requirements if mandated by your project specifications. Ensure the SOT-89 package dimensions align with your PCB footprint design before finalizing procurement.
Selection Notes
Select this component for designs requiring a discrete silicon NPN transistor with a 12 V breakdown voltage. It is appropriate for circuits operating up to the ultra-high frequency band where a low noise figure near 1.8 dB is required. Consider the SOT-89 package constraints regarding thermal dissipation and physical space availability on the circuit board.
Part Context
This component belongs to the category of silicon bipolar transistors manufactured by NEC and other suppliers. It serves as a discrete alternative to integrated MMIC solutions for specific frequency ranges. The part is widely recognized in the industry for its balance of performance and cost in general-purpose RF front-end designs.
Replacement Considerations
The NE46134 is listed as an equivalent part number from NEC. Verify pinout compatibility and electrical parameters against the original datasheet before substitution.
