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The CEL 2SC3357-T1-RF-A is a silicon NPN RF transistor designed for low-noise amplification in the ultra-high frequency band. It operates with a maximum collector-emitter voltage of 12 V and a maximum collector current of 0.1 A. The device features a typical noise figure of 1.8 dB and a typical gain of 9.0 dB at 1.0 GHz under standard bias conditions (VCE = 10 V, IC = 40 mA). Packaged in a 3-pin SOT-89 configuration, it supports operation across VHF, UHF, and CATV bands.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with existing supply chain channels as availability may vary by region. Cross-reference the JEITA equivalent part number NE85634 for sourcing alternatives if necessary.
Select this component when designing circuits requiring low noise figures around 1.8 dB at 1.0 GHz. Confirm that the 0.1 A maximum collector current meets the power handling requirements of the target application. Verify that the SOT-89 package dimensions fit within the available PCB real estate constraints.
This component belongs to the Silicon Bipolar Transistors category within the CEL product portfolio. It serves as a discrete active element for RF signal conditioning, distinct from integrated MMIC solutions or GaAs FETs offered by the same manufacturer.
The JEITA equivalent part number NE85634 is documented as a compatible alternative. Verify pinout and electrical parameters against the original datasheet before substitution.