2SC3357-T1-RF-A

2SC3357-T1-RF-A

  • Description:RF TRANS NPN 12V 6.5GHZ SOT-89
  • Series:-

SKU:20e060ac6890 Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 12V 6.5GHZ SOT-89
  • Series:-
  • Mfr:CEL
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Frequency - Transition:6.5GHz
  • Noise Figure (dB Typ @ f):1.8dB @ 1GHz
  • Gain:10dB
  • Power - Max:1.2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 20mA, 10V
  • Current - Collector (Ic) (Max):100mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:SOT-89
  • Grade:-
  • Qualification:-

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2SC3357-T1-RF-A

Overview

The CEL 2SC3357-T1-RF-A is a silicon NPN RF transistor designed for low-noise amplification in the ultra-high frequency band. It operates with a maximum collector-emitter voltage of 12 V and a maximum collector current of 0.1 A. The device features a typical noise figure of 1.8 dB and a typical gain of 9.0 dB at 1.0 GHz under standard bias conditions (VCE = 10 V, IC = 40 mA). Packaged in a 3-pin SOT-89 configuration, it supports operation across VHF, UHF, and CATV bands.

Feature Summary

  • Engineered for low noise applications in VHF, UHF, and CATV frequency ranges
  • Utilizes silicon epitaxial construction for high-frequency performance
  • Provides stable amplification characteristics suitable for front-end receiver stages

Applications

  • Low noise amplifier design for VHF bands
  • Low noise amplifier design for UHF bands
  • CATV band signal processing circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with existing supply chain channels as availability may vary by region. Cross-reference the JEITA equivalent part number NE85634 for sourcing alternatives if necessary.

Selection Notes

Select this component when designing circuits requiring low noise figures around 1.8 dB at 1.0 GHz. Confirm that the 0.1 A maximum collector current meets the power handling requirements of the target application. Verify that the SOT-89 package dimensions fit within the available PCB real estate constraints.

Part Context

This component belongs to the Silicon Bipolar Transistors category within the CEL product portfolio. It serves as a discrete active element for RF signal conditioning, distinct from integrated MMIC solutions or GaAs FETs offered by the same manufacturer.

Replacement Considerations

The JEITA equivalent part number NE85634 is documented as a compatible alternative. Verify pinout and electrical parameters against the original datasheet before substitution.

2SC3357-T1-RF-A2SC3357-T1-RF-A

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