2SC3357

Overview

The EVVO 2SC3357 is an NPN silicon RF bipolar transistor designed for ultra-high frequency applications. It operates with a collector-emitter voltage of 12V and supports a continuous collector current of 100mA. The device features a transition frequency (fT) of 6.5GHz, enabling high-frequency signal processing. Key electrical parameters include a DC current gain (hFE) ranging from 50 to 250 depending on the classification type, and a maximum power dissipation of 1.2W. The component utilizes a SOT-89 surface-mount package, providing low noise performance and high power gain suitable for RF amplifier stages.

Feature Summary

• Low noise and high gain characteristics optimized for RF signal integrity
• High power gain capability supporting efficient amplification
• Large total power dissipation rating for thermal stability

Applications

• Ultra-high frequency band amplifiers
• RF front-end modules requiring low noise figures
• High-gain microwave circuit designs

Procurement Notes

Verify the specific hFE classification suffix (F or E) required for your design, as this affects the minimum DC current gain range. Confirm the SOT-89 package dimensions match your PCB footprint constraints. Ensure sourcing channels provide genuine EVVO components to maintain specified RF performance metrics.

Selection Notes

Select the 2SC3357-F variant for moderate gain requirements (80-160) or the 2SC3357-E variant for higher gain applications (125-250). Consider the 1.2W power dissipation limit when designing heat dissipation strategies. Verify that the 12V VCEO rating aligns with the operating voltage of the target RF circuit stage.

Part Context

This component belongs to the family of NPN silicon RF transistors manufactured by EVVO. It is specifically engineered for surface-mount assembly in compact electronic devices. The SOT-89 packaging facilitates automated placement while maintaining thermal performance through the exposed collector pad.

Replacement Considerations

Direct substitutes must match the 12V VCEO, 100mA IC, and 6.5GHz fT specifications. Verify pinout compatibility for Base, Collector, and Emitter configurations in the SOT-89 package before implementation.