Single Bipolar Transistors 2SC3468F product image

2SC3468F

$0.16
  • Description:TRANS NPN 300V 0.1A 3-MP
  • Series:-

SKU:98ff72a4c719 Category: Brand:

  
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2SC3468F is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 300V 0.1A 3-MP. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC3468F

  • Description:TRANS NPN 300V 0.1A 3-MP
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):300 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 2mA, 20mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 10V
  • Power - Max:1 W
  • Frequency - Transition:150MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:3-MP
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC3468F

2SC3468F

Single Bipolar Transistors Overview

The onsemi 2SC3468F is a small signal NPN silicon bipolar junction transistor designed for general-purpose amplification and switching applications. It features a maximum collector current of 0.1 A and a collector-emitter breakdown voltage of 300 V. The device operates in a single-element configuration within a TO-226 cylindrical through-hole package. Key electrical characteristics include a minimum DC current gain (hFE) of 160 and a transition frequency of 150 MHz, ensuring reliable performance in low-power circuit designs.

Single Bipolar Transistors Feature Summary

  • High voltage capability with a 300 V collector-emitter breakdown rating suitable for demanding circuits
  • Low noise and high linearity characteristics optimized for audio and RF amplifier stages
  • Robust thermal management via the TO-226 plastic epoxy cylindrical package

Single Bipolar Transistors Applications

  • Audio pre-amplifier circuits
  • RF signal amplification
  • General-purpose switching regulators

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'F' against the manufacturer's official datasheet to confirm exact binning or packaging variations. Ensure the component matches the TO-226 form factor and NPN polarity required by the design. Cross-reference the manufacturer part number with authorized distributors to confirm authenticity and traceability before procurement.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN transistor with moderate current handling is required. The 300 V rating provides significant headroom for inductive loads or high-side switching. Consider the TO-226 package constraints for PCB layout and thermal dissipation requirements compared to surface-mount alternatives.

Single Bipolar Transistors Part Context

This transistor belongs to the broader family of small-signal NPN silicon transistors used in discrete semiconductor applications. It shares functional similarities with other high-voltage BJT series but is distinguished by its specific 300 V rating and 150 MHz transition frequency. The device serves as a fundamental building block for analog signal processing and power control modules.

Single Bipolar Transistors Replacement Considerations

Compatible substitutes include the 2SC3467E and 2SC3468D. Verify that replacement parts maintain the same NPN polarity, TO-226 package dimensions, and equivalent voltage/current ratings to ensure mechanical and electrical compatibility without redesigning the host circuit.

2SC3468F2SC3468F
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