Single Bipolar Transistors 2SC3503DSTU product image

2SC3503DSTU

  • Description:TRANS NPN 300V 0.1A TO-126-3
  • Series:-

SKU:a5ea1303a76c Category: Brand:

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2SC3503DSTU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 300V 0.1A TO-126-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC3503DSTU

  • Description:TRANS NPN 300V 0.1A TO-126-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):300 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 2mA, 20mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 10mA, 10V
  • Power - Max:7 W
  • Frequency - Transition:150MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC3503DSTU

2SC3503DSTU

Single Bipolar Transistors Overview

The onsemi 2SC3503DSTU is an NPN epitaxial silicon transistor housed in a TO-126 package. It features a collector-emitter breakdown voltage of 300V and a continuous collector current rating of 100mA. The device offers a DC current gain (hFE) range of 160 to 320, classifying it as D grade. Key electrical characteristics include a transition frequency of 150MHz and low reverse transfer capacitance of 1.8pF at VCB=30V.

Single Bipolar Transistors Feature Summary

  • High voltage capability with 300V collector-emitter breakdown
  • Low reverse transfer capacitance for reduced signal feedback
  • Excellent gain linearity designed to minimize total harmonic distortion
  • High-frequency performance suitable for RF applications

Single Bipolar Transistors Applications

  • Audio amplification circuits
  • Voltage amplifier stages
  • Current source implementations
  • CRT display video output drivers
  • General-purpose amplification tasks

Single Bipolar Transistors Procurement Notes

Verify the specific hFE binning corresponds to the 'D' suffix requirement for your design's gain tolerance needs. Confirm the TO-126 through-hole package dimensions match your PCB footprint. Ensure thermal management strategies account for the specified junction-to-case resistance values during operation.

Single Bipolar Transistors Selection Notes

Select this component when high voltage isolation and low distortion are required in small-signal amplification. The D-grade classification provides a higher minimum gain compared to lower grades, reducing the need for external biasing adjustments. Consider the complementary PNP counterpart for push-pull configurations.

Single Bipolar Transistors Part Context

This part belongs to the 2SC3503 series of NPN epitaxial silicon transistors originally developed by Fairchild Semiconductor. The series is widely recognized for its use in television display and audio equipment. The 2SC3503DSTU variant specifically denotes the D-grade hFE binning within the standard tube packaging format.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the KSA1381 or 2SA1381 as the direct complementary PNP pair. Other general-purpose NPN transistors with similar 300V ratings may serve as substitutes if gain and frequency requirements align.

2SC3503DSTU2SC3503DSTU

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