2SC3503ESTU

Description：TRANS NPN 300V 0.1A TO-126-3
Series：-

SKU:4d5f057ec4dd Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

2SC3503ESTU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 300V 0.1A TO-126-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC3503ESTU

Description：TRANS NPN 300V 0.1A TO-126-3
Series：-
Mfr：onsemi
Package：Tube
Transistor Type：NPN
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：300 V
Vce Saturation (Max) @ Ib, Ic：600mV @ 2mA, 20mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 10mA, 10V
Power - Max：7 W
Frequency - Transition：150MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-225AA, TO-126-3
Supplier Device Package：TO-126-3
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC3503ESTU

2SC3503ESTU

Single Bipolar Transistors Overview

The 2SC3503ESTU is an NPN epitaxial silicon transistor housed in a TO-126 package. It features a collector-emitter breakdown voltage of 300V and a continuous collector current rating of 100mA. The device offers a high transition frequency of 150MHz and low reverse transfer capacitance of 1.8pF at VCB=30V. The 'E' suffix indicates an hFE classification range of 100 to 200, while the 'TU' suffix denotes tube packing.

Single Bipolar Transistors Feature Summary

High voltage capability with 300V collector-emitter breakdown
Low reverse transfer capacitance for reduced signal feedback
Excellent gain linearity designed to minimize total harmonic distortion
High-frequency operation up to 150MHz

Single Bipolar Transistors Applications

Audio amplification circuits
Voltage amplifier stages
Current source implementations
CRT display and video output drivers
General-purpose amplification tasks

Single Bipolar Transistors Procurement Notes

Verify the specific hFE grade corresponding to the 'E' suffix (100–200) against circuit requirements. Confirm the TO-126 flange mount package dimensions match the PCB layout. Ensure the tube packing format aligns with available assembly equipment. Cross-reference the datasheet revision to confirm thermal resistance values.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high voltage isolation combined with precise gain linearity. The E-grade binning provides a specific DC current gain window suitable for linear amplifier designs. Consider the thermal resistance of 17.8°C/W when designing heat dissipation strategies for continuous operation.

Single Bipolar Transistors Part Context

This part belongs to the 2SC3503/KSC3503 series of NPN power transistors originally manufactured by Fairchild Semiconductor. The series includes complementary PNP devices like the 2SA1381. The ESTU variant specifically designates the E-gain bin and tube packaging within the broader product family.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other NPN transistors with 300V VCEO and similar TO-126 packages. Verify that replacement parts meet the 150MHz fT requirement and maintain comparable gain linearity characteristics for audio or video applications.