2SC3507

Single Bipolar Transistors Overview

The Panasonic 2SC3507 is a silicon NPN triple diffusion planar power transistor designed for high breakdown voltage and high-speed switching applications. It features a collector-base voltage (VCBO) of 1,000 V and a collector-emitter voltage (VCEO) of 800 V. The device supports a continuous collector current of 5 A and peak currents up to 10 A, with a maximum collector power dissipation of 80 W at 25°C case temperature. It utilizes the TOP-3F-A1 package, which allows direct mounting to heat sinks via a single screw.

Single Bipolar Transistors Feature Summary

• High-speed switching capability with optimized transition frequency
• High collector-base voltage rating suitable for high-voltage circuits
• Satisfactory linearity of forward current transfer ratio (hFE)
• Full-pack package design enabling secure installation to heat sinks

Single Bipolar Transistors Applications

• High-voltage high-speed switching circuits
• Power amplification stages requiring high breakdown voltage
• General electronic equipment and measuring instruments

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized distributors or official Panasonic channels. Confirm compliance with RoHS Directive (EU 2002/95/EC). Check current lifecycle status as maintenance or discontinued types may have limited availability. Ensure proper handling precautions are followed during storage and mounting to prevent electrostatic discharge damage.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high voltage isolation and fast switching speeds. Consider thermal management requirements given the 80 W dissipation rating. Verify that the operating junction temperature remains within -55°C to +150°C limits. Ensure base drive currents meet saturation requirements for optimal switching performance.

Single Bipolar Transistors Part Context

The 2SC3507 belongs to Panasonic's lineup of silicon NPN triple diffusion planar transistors. It is engineered specifically for applications demanding high breakdown voltage combined with rapid switching characteristics. The device complements other power transistors in similar voltage ranges while offering distinct thermal mounting advantages through its specialized package design.

Single Bipolar Transistors Replacement Considerations

Consult official Panasonic documentation for verified substitute part numbers. Cross-reference electrical parameters including VCBO, VCEO, IC ratings, and package dimensions before substitution. Verify compatibility with existing thermal management solutions and circuit driving requirements.