2SC3519

Single Bipolar Transistors Overview

The 2SC3519 is a silicon NPN epitaxial planar transistor designed for audio and general-purpose applications. It features a collector-emitter voltage (VCEO) of 160 V, a maximum collector current (IC) of 15 A, and a collector power dissipation (PC) of 130 W at 25 °C case temperature. The device exhibits a transition frequency (fT) of 50 MHz and maintains constant hFE characteristics across a wide current range to ensure high-quality audio performance. Packaged in the TO-3P-3L format with a bare lead frame compliant with RoHS standards.

Single Bipolar Transistors Feature Summary

• Complementary to the 2SA1386 PNP transistor
• Designed as a Linear Amplifier Power Transistor (LAPT)
• Maintains constant DC current gain (hFE) across a wide current range

Single Bipolar Transistors Applications

• Audio power amplifiers
• General purpose electronic equipment

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank marking on the component body against the datasheet table before integration. Confirm that the TO-3P-3L package dimensions and recommended screw torque align with the heat sink design. Ensure compliance with RoHS requirements by sourcing units with the specified bare lead frame finish.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring an NPN power transistor with a 160 V breakdown voltage and 15 A continuous current capability. Consider the thermal resistance values for heatsink calculations. Verify that the required hFE gain falls within the available O, P, or Y ranks defined in the marking diagram.

Single Bipolar Transistors Part Context

This component belongs to Sanken Electric's LAPT series, optimized for linear amplifier operations. It serves as the NPN counterpart to the 2SA1386, facilitating push-pull configurations in audio output stages. The TO-3P-3L package provides robust mechanical mounting and efficient thermal transfer to a chassis or heatsink.

Single Bipolar Transistors Replacement Considerations

The 2SA1386 is the designated complementary PNP transistor for matched operation. Direct replacements should be verified against the absolute maximum ratings and electrical characteristics to ensure compatibility with existing circuit designs.

Single Bipolar Transistors FAQ

What are the available hFE gain ranks for the 2SC3519?

The device is available in three hFE ranks: Rank O (50 to 100), Rank P (70 to 140), and Rank Y (90 to 180). These are indicated by specific letters in the marking code.

What is the maximum collector power dissipation rating?

The maximum collector power dissipation is 130 W, measured under the condition of a case temperature (TC) of 25 °C.

Is the 2SC3519 suitable for aerospace or medical applications?

No. The datasheet explicitly states that the product is not intended for use in specific applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, or Class III medical devices.