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The 2SC3583-T1B-A is an NPN epitaxial silicon high-frequency transistor manufactured by CEL, corresponding to the NE681 series. Registered under EIAJ standard as 2SC3583, it utilizes a Micro-X package (outline 35). Key electrical characteristics include a gain bandwidth product of 9.0 GHz at VCE = 8 V and IC = 20 mA. The device exhibits a noise figure of 1.2 dB at 1 GHz and 1.6 dB at 2 GHz when biased at VCE = 8 V and IC = 7 mA. Associated gain reaches 13 dB at 1 GHz and 12 dB at 2 GHz under the same bias conditions. Maximum ratings specify a collector-to-base voltage of 20 V, collector-to-emitter voltage of 10 V, and total power dissipation of 295 mW.
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm that the specific ordering suffix matches the required package style and performance grade. Request current datasheets to ensure compliance with latest specifications. Validate supply chain integrity prior to integration into production designs.
Select this component for designs requiring high gain bandwidth and low noise figures in the gigahertz range. Ensure biasing conditions align with specified VCE and IC values for optimal NF and MAG performance. Consider thermal resistance limits during layout planning. Verify compatibility with existing impedance matching networks for target frequencies.
This part belongs to the NEC/CEL NE681 series of NPN silicon transistors. It shares family characteristics with variants like NE68133 and NE68139 but differs in package outline and specific parasitic parameters. The 2SC3583 designation identifies the specific Micro-X packaged version within this broader product line.
Direct substitutes within the NE681 series include NE68133 and NE68139, though package outlines differ. Cross-reference electrical parameters such as fT, NF, and PT carefully. Verify pinout compatibility if replacing with non-identical package styles from the same series.