2SC3585-A

Overview

The CEL 2SC3585-A is an NPN silicon epitaxial transistor designed for low-noise and small-signal amplifiers in the VHF to UHF bands. It utilizes a direct nitride passivated base surface process (DNP) to achieve excellent noise figures at high current values, providing wide dynamic range and high associated gain. The device operates with a collector-to-emitter voltage of 10 V, a maximum collector current of 35 mA, and total power dissipation of 200 mW. Key electrical characteristics include a typical noise figure of 1.8 dB and a gain bandwidth product of 10 GHz at 2.0 GHz.

Feature Summary

• Employs a proprietary direct nitride passivated base surface process (DNP) for superior noise performance at high currents.
• Delivers high power gain and very low noise figures suitable for microwave applications.
• Provides excellent associated gain and a wide dynamic range.

Applications

• VHF band low-noise amplifiers
• UHF band low-noise amplifiers
• Microwave low-noise amplifier circuits

Procurement Notes

Verify that the specific ordering suffix matches the required DC current gain classification. The datasheet defines three distinct hFE ranges: Class R43/Q (50 to 100), Class R44/R (80 to 160), and Class R45/S (125 to 250). Confirm the marking code on the component corresponds to the intended gain bin before finalizing procurement specifications.

Selection Notes

Select the appropriate hFE class based on circuit bias requirements. The device requires a collector current between 3 mA and 10 mA for optimal noise and gain performance at 2.0 GHz. Ensure the operating junction temperature remains within the specified -65 °C to +150 °C storage range and that thermal management supports the 200 mW dissipation limit.

Part Context

This component is manufactured by California Eastern Laboratories (CEL) and is functionally equivalent to the NEC NE68033. Both part numbers share identical electrical specifications and are documented together in the same Renesas Electronics data sheet. The device represents a specialized RF solution for broadband amplification where low noise is critical.

Replacement Considerations

The NEC NE68033 is the primary verified substitute. Both components share identical pinouts, electrical ratings, and package dimensions. Verify that any replacement unit meets the specific hFE classification required for the design.

FAQ

What is the difference between the hFE classifications?

The device is sorted into three gain bins: Class R43/Q (hFE 50-100), Class R44/R (hFE 80-160), and Class R45/S (hFE 125-250). These are distinguished by specific markings on the package.

How does the DNP process affect performance?

The Direct Nitride Passivated Base Surface process allows the transistor to maintain excellent noise figures at higher current values compared to standard processes, resulting in wider dynamic range.

What are the absolute maximum ratings?

The maximum ratings are 20 V for Collector-to-Base Voltage, 10 V for Collector-to-Emitter Voltage, 1.5 V for Emitter-to-Base Voltage, 35 mA for Collector Current, and 200 mW for Total Power Dissipation.