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The CEL 2SC3585-T1B-A is an NPN silicon RF bipolar transistor designed for high-frequency applications. It utilizes a planar epitaxial process and features a SOT-23-3 surface-mount package. The device is characterized by low noise performance and high power gain, making it suitable for VHF to UHF frequency bands. Key electrical parameters include a collector-emitter voltage (VCEO) of 10V, a collector current (IC) of 35mA, and a total power dissipation (PT) of 200mW. The transition frequency (fT) reaches 10 GHz at VCE=6V and IC=20mA. Noise figures are typically 1.8 dB at 2.0 GHz. The component is identified as End-of-Life (EOL) with limited availability.
This component is classified as End-of-Life (EOL) by the manufacturer. Availability is restricted, and distributors may not stock this item in all regions. Verification of current supply status and potential obsolescence risks is required before integration into new designs. Alternative sourcing should be evaluated due to discontinuation status.
Designers should consider the 10V collector-emitter voltage limit and 35mA maximum collector current when sizing bias networks. The SOT-23-3 package requires appropriate thermal management for the 200mW power dissipation rating. Verify that the 10 GHz transition frequency meets the specific operating band requirements of the target application.
The 2SC3585 series was originally developed by NEC for microwave low-noise applications. Renesas Electronics subsequently acquired the relevant semiconductor business lines, leading to dual branding in some databases. The -T1B-A suffix indicates specific tape-and-reel packaging configurations used by CEL for distribution.
Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the EOL status, engineers must identify equivalent components based on matching electrical specifications such as fT, noise figure, and package type from other manufacturers.