2SC3585-T1B-A

2SC3585-T1B-A

$1.30
  • Description:RF TRANS NPN 10V 10GHZ SOT-23-3
  • Series:-

SKU:d9d32c797825 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 10V 10GHZ SOT-23-3
  • Series:-
  • Mfr:CEL
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):10V
  • Frequency - Transition:10GHz
  • Noise Figure (dB Typ @ f):1.8dB @ 2GHz
  • Gain:9dB
  • Power - Max:200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 10mA, 6V
  • Current - Collector (Ic) (Max):35mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3
  • Grade:-
  • Qualification:-

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2SC3585-T1B-A

Overview

The CEL 2SC3585-T1B-A is an NPN silicon RF bipolar transistor designed for high-frequency applications. It utilizes a planar epitaxial process and features a SOT-23-3 surface-mount package. The device is characterized by low noise performance and high power gain, making it suitable for VHF to UHF frequency bands. Key electrical parameters include a collector-emitter voltage (VCEO) of 10V, a collector current (IC) of 35mA, and a total power dissipation (PT) of 200mW. The transition frequency (fT) reaches 10 GHz at VCE=6V and IC=20mA. Noise figures are typically 1.8 dB at 2.0 GHz. The component is identified as End-of-Life (EOL) with limited availability.

Feature Summary

  • Utilizes silicon epitaxial planar technology for microwave low-noise amplifier designs.
  • Provides high power gain and low noise characteristics in a compact SOT-23 package.
  • Features direct nitride passivation base processing to ensure stability and performance.

Applications

  • Ultra-high frequency low-noise amplifiers
  • VHF and UHF broadband amplification circuits
  • CATV high-frequency signal processing

Procurement Notes

This component is classified as End-of-Life (EOL) by the manufacturer. Availability is restricted, and distributors may not stock this item in all regions. Verification of current supply status and potential obsolescence risks is required before integration into new designs. Alternative sourcing should be evaluated due to discontinuation status.

Selection Notes

Designers should consider the 10V collector-emitter voltage limit and 35mA maximum collector current when sizing bias networks. The SOT-23-3 package requires appropriate thermal management for the 200mW power dissipation rating. Verify that the 10 GHz transition frequency meets the specific operating band requirements of the target application.

Part Context

The 2SC3585 series was originally developed by NEC for microwave low-noise applications. Renesas Electronics subsequently acquired the relevant semiconductor business lines, leading to dual branding in some databases. The -T1B-A suffix indicates specific tape-and-reel packaging configurations used by CEL for distribution.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the EOL status, engineers must identify equivalent components based on matching electrical specifications such as fT, noise figure, and package type from other manufacturers.

2SC3585-T1B-A2SC3585-T1B-A
$1.30
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