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2SC3598E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 120V 0.2A TO-126. Review the specifications below when checking this part for your BOM.
Single Bipolar Transistors specifications for 2SC3598E
- Description：TRANS NPN 120V 0.2A TO-126
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：200 mA
- Voltage - Collector Emitter Breakdown (Max)：120 V
- Vce Saturation (Max) @ Ib, Ic：800mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 10mA, 10V
- Power - Max：1.2 W
- Frequency - Transition：500MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-225AA, TO-126-3
- Supplier Device Package：TO-126
- Grade：-
- Qualification：-
Single Bipolar Transistors datasheet and documents for 2SC3598E
Single Bipolar Transistors Overview
The 2SC3598E is a single NPN epitaxial planar silicon transistor manufactured by onsemi. It features a collector-emitter breakdown voltage of 160V and a maximum continuous collector current of 0.2A. The device has a transition frequency of 150MHz and a maximum power dissipation of 1.2W. It utilizes a TO-126 (TO-225AA) three-pin package designed for through-hole mounting. The component operates within a junction temperature range of -55°C to 150°C.
Single Bipolar Transistors Feature Summary
- Epitaxial planar silicon construction for high reliability
- High collector-emitter breakdown voltage capability
- Suitable for ultrahigh-definition CRT display video output applications
Single Bipolar Transistors Applications
- Ultrahigh-definition CRT display circuits
- Video output stages in display systems
Single Bipolar Transistors Procurement Notes
Verify the specific datasheet revision and electrical characteristics directly from onsemi official documentation before integration. Confirm that the TO-126 pinout matches the target PCB footprint design. Ensure thermal management strategies align with the 1.2W power dissipation rating under expected operating conditions.
Single Bipolar Transistors Selection Notes
Select this component when an NPN transistor with 160V blocking capability and 0.2A current handling is required for through-hole assembly. The TO-126 package provides robust mechanical stability. Consider the 150MHz transition frequency for appropriate signal bandwidth requirements in video processing paths.
Single Bipolar Transistors Part Context
This part belongs to the 2SA1404/2SC3598 series of PNP/NPN epitaxial planar silicon transistors. These components are specifically engineered for use in ultrahigh-definition CRT display applications, providing matched performance characteristics for complementary circuit configurations.
Single Bipolar Transistors Replacement Considerations
The 2SC3503ESTU is a related NPN transistor in the same package family but offers different voltage ratings. Verify exact parameter compatibility before substitution.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.
