2SC3646T-TD-E

Single Bipolar Transistors Overview

The onsemi 2SC3646T-TD-E is a single NPN silicon bipolar junction transistor housed in an ultrasmall PCP (SOT-89) surface-mount package. It features a collector-emitter voltage of 100 V, a collector-base voltage of 120 V, and a continuous collector current of 1 A. The device offers a gain-bandwidth product of 120 MHz and a maximum power dissipation of 500 mW at 25°C, extending to 1.3 W when mounted on a ceramic substrate. It supports a junction temperature up to 150°C and includes T-rank classifications for DC current gain.

Single Bipolar Transistors Feature Summary

• Adopts FBET and MBIT processes for high breakdown voltage and large current capacity
• Features fast switching speed with low saturation voltage
• Ultrasmall size facilitates high-density small-sized hybrid IC designs

Single Bipolar Transistors Applications

• General-purpose amplifiers
• Switching circuits
• High-density hybrid integrated circuits

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank suffix (e.g., 'T' for 200–400 gain) against design requirements, as performance varies by bin. Confirm RoHS compliance and Pb-free status via official documentation. Validate thermal management strategies for the PCP package, noting that power dissipation ratings depend heavily on PCB copper area and mounting conditions.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring compact NPN switching or amplification with moderate voltage handling. Compare against the complementary PNP 2SA1416 for push-pull configurations. Ensure the required DC current gain falls within the specified T-rank limits. Verify that the operating frequency remains below the 120 MHz gain-bandwidth limit for stable performance.

Single Bipolar Transistors Part Context

This part belongs to the 2SC3646 series, designed alongside the 2SA1416 PNP counterpart. Both utilize advanced FBET and MBIT processes to achieve high reliability in a minimal footprint. The series targets modern electronics where space constraints demand ultrasmall packages without sacrificing current capacity or voltage ratings.

Single Bipolar Transistors Replacement Considerations

The 2SC3646S-TD-E serves as a direct functional substitute with different gain ranking. Designers should verify pinout compatibility and ensure thermal characteristics align with the new gain bin specifications before implementation.

Single Bipolar Transistors FAQ

What are the DC current gain ranks available for this device?

The device is classified into ranks based on hFE at 100 mA: Rank S (100–200), Rank R (140–280), and Rank T (200–400).

How does mounting affect the power dissipation rating?

Standard power dissipation is 500 mW at 25°C. This increases to 1.3 W when the device is surface-mounted on a ceramic substrate measuring 250 mm² x 0.8 mm.

What is the typical turn-on time for this transistor?

The typical turn-on time (ton) is 80 ns under specified test conditions.