2SC3647T-TD-E

Single Bipolar Transistors Overview

The onsemi 2SC3647T-TD-E is a single NPN bipolar junction transistor (BJT) housed in a PCP surface-mount package. It features a maximum collector current of 2 A and a collector-emitter breakdown voltage of 100 V. The device exhibits a gain-bandwidth product of 120 MHz and a low collector-emitter saturation voltage of 130 mV at 1 A. Power dissipation reaches 1.5 W when mounted on a ceramic substrate, with a maximum operating temperature of +150 °C.

Single Bipolar Transistors Feature Summary

• Utilizes FBET and MBIT processes for high breakdown voltage and large current capacity.
• Features an ultrasmall PCP package designed to facilitate high-density small-sized hybrid ICs.
• Provides low collector-emitter saturation voltage for efficient switching performance.

Single Bipolar Transistors Applications

• High-density small-sized hybrid integrated circuits
• General-purpose switching applications requiring high current capacity
• Power management circuits within consumer electronics

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'TD' corresponds to the tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets Pb-Free and Halide Free requirements if environmental compliance is mandatory for the target assembly process. Ensure the selected rank aligns with the required DC current gain specifications for the application.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a compact NPN transistor capable of handling 2 A continuous current. The PCP package is suitable for space-constrained printed circuit board layouts. Consider the thermal derating curves when determining power dissipation limits under varying ambient temperatures or mounting conditions.

Single Bipolar Transistors Part Context

This part belongs to the 2SC3647 series, which is paired with the 2SA1417 PNP transistor. Both devices share similar electrical characteristics and are manufactured using advanced silicon processes. They are intended for complementary use in push-pull amplifier stages or single-ended switching configurations within electronic systems.

Single Bipolar Transistors Replacement Considerations

The 2SC3647S-TD-E is listed as a similar alternative within the same family. Verify pinout compatibility and ensure the replacement meets the specific hFE rank requirements of the original design.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter saturation voltage?

The maximum collector-emitter saturation voltage is 130 mV when tested at a collector current of 1 A and a base current of 100 mA.

How is the DC current gain classified?

The device is classified into ranks based on DC current gain at 100 mA: Rank R (100-200), Rank S (140-280), and Rank T (200-400).

What is the recommended mounting condition for maximum power dissipation?

Maximum power dissipation of 1.5 W is achieved when the device is mounted on a ceramic substrate measuring 250 mm² x 0.8 mm.