2SC3665-Y,T2NSF(J

Description：TRANS NPN 120V 0.8A MSTM
Series：-

SKU:75466c8f02d4 Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SC3665-Y,T2NSF(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 120V 0.8A MSTM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC3665-Y,T2NSF(J

Description：TRANS NPN 120V 0.8A MSTM
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：800 mA
Voltage - Collector Emitter Breakdown (Max)：120 V
Vce Saturation (Max) @ Ib, Ic：1V @ 50mA, 500mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 100mA, 5V
Power - Max：1 W
Frequency - Transition：120MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：SC-71
Supplier Device Package：MSTM
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC3665-Y,T2NSF(J

2SC3665-Y,T2NSF(J

Single Bipolar Transistors Overview

The Toshiba 2SC3665 is a silicon NPN epitaxial planar transistor manufactured using the PCT process. It features a collector-emitter voltage of 120 V and a maximum collector current of 800 mA. The device provides a DC current gain ranging from 80 to 240, with a transition frequency of 120 MHz. It operates within a junction temperature range of -55 °C to 150 °C and dissipates up to 1000 mW of power.

Single Bipolar Transistors Feature Summary

Designed for audio power amplifier applications
Suitable for driver-stage amplifier circuits
Complementary to the 2SA1425 PNP transistor

Single Bipolar Transistors Applications

Audio power amplifiers
Driver-stage amplifiers

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba Semiconductor documentation to confirm exact electrical binning and environmental compliance status. Confirm RoHS compatibility directly with the manufacturer or authorized distributor, as indicated by lot marking variations in the datasheet. Ensure the component meets the intended application's reliability requirements before integration.

Single Bipolar Transistors Selection Notes

Select this component for general electronics applications requiring high-voltage NPN amplification. Verify that the required DC current gain falls within the specified O or Y classification ranges. Ensure the operating conditions remain within the absolute maximum ratings to maintain long-term reliability and prevent performance degradation under heavy loads.

Single Bipolar Transistors Part Context

This component belongs to the Toshiba 2SC series of bipolar junction transistors. It utilizes a silicon NPN epitaxial structure optimized for linear amplification tasks. The device is packaged in a standard through-hole configuration compatible with common electronic assembly processes.