2SC3668-O,T2CLAF(J

Single Bipolar Transistors Overview

The Toshiba 2SC3668 is a silicon NPN epitaxial planar transistor utilizing the PCT process. It features a collector-emitter voltage rating of 50 V and a maximum collector current of 2 A, with a collector power dissipation capacity of 1000 mW. The device exhibits low saturation voltage (VCE(sat) max 0.5 V at IC = 1 A) and high-speed switching characteristics, including a typical storage time of 1.0 μs. It operates within a junction temperature range up to 150 °C.

Single Bipolar Transistors Feature Summary

• Low collector saturation voltage for efficient power handling
• High-speed switching capability suitable for rapid transitions
• Complementary pairing available with the 2SA1428 PNP transistor

Single Bipolar Transistors Applications

• Power amplifier circuits
• General-purpose power switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status by checking lot number markings or contacting Toshiba sales representatives, as indicated in the datasheet. Confirm environmental compliance against specific project requirements before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring robust general-purpose switching performance with moderate voltage ratings. Ensure thermal management accommodates the 1000 mW dissipation limit and verify that the 50 V breakdown voltage aligns with circuit operating conditions.

Single Bipolar Transistors Part Context

This NPN transistor belongs to Toshiba's discrete semiconductor lineup designed for general electronics. It serves as a standard solution for amplification and switching tasks in consumer and industrial equipment, offering reliable performance through its epitaxial planar construction.

Single Bipolar Transistors Replacement Considerations

The 2SC3669-O is documented as a complementary alternative within the same product family.