2SC3668-Y,T2WNLF(J

Single Bipolar Transistors Overview

The Toshiba 2SC3668-Y,T2WNLF(J) is a silicon NPN epitaxial planar transistor utilizing the PCT process. It features a collector-emitter voltage of 50 V and a maximum collector current of 2 A, with a collector power dissipation rating of 1000 mW. The device exhibits a low saturation voltage of 0.5 V (max) at 1 A and a typical storage time of 1.0 μs. The 'Y' suffix indicates a DC current gain classification of 120 to 240. It is housed in a 2-7D101A package.

Single Bipolar Transistors Feature Summary

• Utilizes PCT process for high-speed switching performance
• Features low collector saturation voltage for efficient operation
• Designed as a complementary pair to the 2SA1428 PNP transistor

Single Bipolar Transistors Applications

• Power amplifier circuits
• General-purpose power switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffixes against official Toshiba Semiconductor documentation to confirm RoHS compatibility status and binning classifications. Confirm that the requested part number matches the exact electrical characteristics required for your design, particularly the hFE range associated with the Y suffix. Ensure compliance with all stated restrictions on product use before procurement.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring an NPN transistor with a 50 V collector-emitter breakdown and up to 2 A continuous current handling. The specified transition frequency and storage time make it suitable for moderate-speed switching tasks. Verify thermal management requirements based on the 1000 mW dissipation limit and safe operating area curves provided in the datasheet.

Single Bipolar Transistors Part Context

This component belongs to the Toshiba 2SC3668 series of general-purpose small signal transistors. It is engineered specifically to complement the 2SA1428 PNP transistor, facilitating push-pull configurations in audio and power stages. The device represents a standard discrete semiconductor solution within Toshiba's broad portfolio of bipolar junction transistors.

Single Bipolar Transistors Replacement Considerations

The 2SC3669-O serves as a verified complementary or substitute option offering similar functionality with an 80 V collector-emitter voltage rating.