Single Bipolar Transistors 2SC3669-Y,T2PASF(M product image

2SC3669-Y,T2PASF(M

  • Description:TRANS NPN 80V 2A MSTM
  • Series:-

SKU:e7e7e518d600 Category: Brand:

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2SC3669-Y,T2PASF(M is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 80V 2A MSTM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC3669-Y,T2PASF(M

  • Description:TRANS NPN 80V 2A MSTM
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 1A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 500mA, 2V
  • Power - Max:1 W
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:SC-71
  • Supplier Device Package:MSTM
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC3669-Y,T2PASF(M

2SC3669-Y,T2PASF(M

Single Bipolar Transistors Overview

The Toshiba 2SC3669-Y,T2PASF(M is a silicon NPN epitaxial planar transistor utilizing the PCT process. It features an absolute maximum collector current of 2 A and a collector-emitter voltage rating of 80 V. The device provides a low collector saturation voltage of 0.5 V maximum at 1 A and exhibits high-speed switching characteristics with a typical storage time of 1.0 μs. It is packaged in the JEDEC-compliant 2-7D101A outline, which corresponds to the TO-92MOD form factor.

Single Bipolar Transistors Feature Summary

  • Utilizes Toshiba's PCT (Planar Cut-Through) process for enhanced reliability and performance
  • Designed for complementary pairing with the 2SA1429 PNP transistor
  • Engineered for low collector saturation voltage to minimize power loss during conduction
  • Optimized for high-speed switching applications requiring rapid turn-off times

Single Bipolar Transistors Applications

  • Power amplifier circuits
  • High-speed power switching applications

Single Bipolar Transistors Procurement Notes

Verify that the ordering suffix matches the specific hFE classification required for the design. Confirm RoHS compatibility status directly with Toshiba sales representatives as indicated in the datasheet documentation. Ensure the package marking aligns with the intended lot number identification requirements for the production run.

Single Bipolar Transistors Selection Notes

Select this component when a general-purpose NPN transistor capable of handling up to 2 A continuous collector current is required. The device is suitable for designs needing a minimum breakdown voltage of 80 V. Consider the complementary 2SA1429 if a matched PNP pair is necessary for push-pull configurations or differential stages.

Single Bipolar Transistors Part Context

This part belongs to Toshiba's lineup of small-signal bipolar junction transistors manufactured using epitaxial planar technology. It serves as a standard discrete semiconductor solution for consumer electronics and industrial control systems where moderate power handling and fast switching are essential requirements.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA1429 as the complementary PNP counterpart. No other direct substitute part numbers are documented in the provided source material.

2SC3669-Y,T2PASF(M2SC3669-Y,T2PASF(M

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